A review of Ga2O3 materials, processing, and devices

Keywords

Materials science, Doping, Optoelectronics, Band gap, Passivation

References

• The electronic structure of β-Ga2O3Mansour Mohamed, C. Janowitz, I. Unger — 2010
• Electrical doping of gassensitive, semiconducting Ga2O3 thin filmsJ. Frank, M. Fleischer, H. Meixner — 1996
• Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3H. H. Tippins — 1965
• GaN nanowire and Ga2O3 nanowire and nanoribbon growth from ion implanted iron catalystJason L. Johnson, Yongho Choi, Ant Ural — 2008
• The oxidation of gallium nitride epilayers in dry oxygenP. Chen, R. Zhang, Xinyi Xu — 2000
• Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxyA. Navarro‐Quezada, Zbigniew Galazka, Sabine Alamé — 2015
• A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin filmHongwei Liang, Yuanpeng Chen, Xiaochuan Xia — 2015
• Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 SubstrateKentaro Kaneko, H. Kawanowa, Hiroshi Ito — 2012
• β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxyStephen W. Kaun, Feng Wu, James S. Speck — 2015
• Humidity sensor based on Ga2O3 nanorods doped with Na+ and K+ from GaN powderDing Wang, Yanlong Lou, Run Wang — 2015
• Non-aqueous synthesis of blue light emitting γ-Ga2O3 and c-In2O3 nanostructures from their ethylene glycolate precursorsAnshu Singhal, Ingo Lieberwirth — 2015
• Electrical properties of Si doped Ga2O3 films grown by pulsed laser depositionFabi Zhang, Katsuhiko Saito, Tooru Tanaka — 2015
• Oxygen vacancies and donor impurities in β-Ga2O3Joel B. Varley, J. R. Weber, Anderson Janotti — 2010
• Deep-ultraviolet transparent conductive β-Ga2O3 thin filmsMasahiro Orita, Hiromichi Ohta, Masahiro Hirano — 2000
• Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3Z. Hajnal, József Miró, G. Kiss — 1999
• Catalytic synthesis and photoluminescence of β-Ga2O3 nanowiresC.H. Liang, Gang Meng, Guozhong Wang — 2001
• Temperature-Dependent Characteristics of GaN Homojunction RectifiersTsung‐Ting Kao, Jeomoh Kim, Yi‐Che Lee — 2015
• Low‐Temperature MOCVD of Crystalline Ga2O3 Nanowires using tBu3GaStephan Schulz, Georg Bendt, Wilfried Assenmacher — 2013
• Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)T.C. Lovejoy, E. N. Yitamben, N. Shamir — 2009
• Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxyV. Gottschalch, Kilian Mergenthaler, G. Wagner — 2009

Cited by

• Band alignments of SiO2 and HfO2 dielectrics with (AlxGa1-x)2O3 film (0≤x≤0.53) grown on Ga2O3 buffer layer on sapphireZhaoqing Feng, Qian Feng, Jincheng Zhang — 2018
• Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov — 2018
• Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronicsAmador Pérez‐Tomás, F. Hosseini Téhérani, P. Bove — 2018
• HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVDHaiding Sun, Kuang‐Hui Li, C. G. Torres Castanedo — 2018
• Schottky Barrier Rectifier Based on (100) β -Ga2O3 and its DC and AC CharacteristicsQiming He, Wenxiang Mu, Bo Fu — 2018
• A survey of acceptor dopants for β-Ga2O3John L. Lyons — 2018
• Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detectorAnisha Kalra, Sandeep Vura, Shashwat Rathkanthiwar — 2018
• Effects of fluorine incorporation into β-Ga2O3Jiangcheng Yang, Chaker Fares, F. Ren — 2018
• Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced currentE. B. Yakimov, A. Y. Polyakov, N. B. Smirnov — 2018
• Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystalsSoohwan Jang, Sunwoo Jung, Jihyun Kim — 2018
• α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphireTakayoshi Oshima, Yuji Katō, Masataka Imura — 2018
• Electrical, optical and structural characteristics of gallium oxide thin films deposited by RF-sputteringL. I. Juárez-Amador, M. Galván-Arellano, J.A. Andraca-Adame — 2018
• Potassium-alumina-boron glass doped with copper ions for solar cell down-convertorsP. S. Shirshnev, А. Е. Романов, V.E. Bougrov — 2018
• Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 SubstratesJiancheng Yang, F. Ren, S. J. Pearton — 2018
• Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-meritJiancheng Yang, F. Ren, Marko J. Tadjer — 2018
• 2300V Reverse Breakdown Voltage Ga2O3 Schottky RectifiersJiancheng Yang, F. Ren, Marko J. Tadjer — 2018
• Twin-induced phase transition from β-Ga2O3 to α-Ga2O3 in Ga2O3 thin filmsByeongdae Choi, Bunyod Allabergenov, Hong‐Kun Lyu — 2018
• Structural and Luminescence Properties of Ga2O3:Zn Micro‐ and NanostructuresIñaki López, Manuel Alonso‐Orts, Emilio Nogales — 2018
• Modal Analysis of β−Ga2O3:Cr Widely Tunable Luminescent Optical MicrocavitiesManuel Alonso‐Orts, Emilio Nogales, J. San Juán — 2018
• Structure and vibrational properties of the dominant O-H center in β-Ga2O3Philip Weiser, Michael Stavola, W. Beall Fowler — 2018

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