Schottky Barrier Rectifier Based on (100) β -Ga2O3 and its DC and AC Characteristics
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- Type
- article
- Published
- 2018-03-01
- Cited by
- 31
- References
- 33
- OpenAlex
- https://openalex.org/W2794570013
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:4096678
Keywords
Algorithm, Mathematics
References
- Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3
- Deep-ultraviolet transparent conductive β-Ga2O3 thin films
- Development of gallium oxide power devices
- High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode
- Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
- First-principles study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and hexagonal phases
- A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature
- Control of Schottky barrier height using highly doped surface layers
- Wide-bandgap semiconductor materials: For their full bloom
- High-mobility β-Ga2O3() single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
- A Survey of Wide Bandgap Power Semiconductor Devices
- Czochralski grown Ga2O3 crystals
- 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
- A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier
- The guard-ring termination for the high-voltage SiC Schottky barrier diodes
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
- Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model
- Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes
- Recent progress in Ga2O3 power devices
- Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
Cited by
- Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit
- 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers
- An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
- Field-Plated Lateral β -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2
- Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation
- Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS
- Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material
- Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes
- Review of gallium oxide based field-effect transistors and Schottky barrier diodes
- Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers
- Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays
- Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO2 Schottky diodes on Pt–Si substrates
- Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
- Performance enhancement of β-Ga2O3 on Si (100) based Schottky barrier diodes using REduced SURface Field
- Dynamic characteristics of PdCoO2/β-Ga2O3 Schottky junctions
- Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study inβ-Ga2O3
- Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
- A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications
- A Strategic Review on Gallium Oxide Based Power Electronics: Recent Progress and Future Prospects
- Numerical Simulation of β-Ga2O3 Single Crystal Growth by Czochralski Method with an Insulation Lid
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