Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 Substrate

Keywords

Materials science, Epitaxy, Crystallography, Transmission electron microscopy, Sapphire

References

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Cited by

• Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductorsKentaro Kaneko, Yoshito Ito, Takayuki Uchida — 2015
• Lattice dynamics of a mist-chemical vapor deposition-grown corundum-like Ga2O3 single crystalR. Cuscó, Núria Domènech-Amador, Takumi Hatakeyama — 2015
• Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD methodShunsuke Murai, Takafumi Sato, Situ Yao — 2016
• Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin filmsShizυo Fujita, Kentaro Kaneko — 2014
• Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substratesYuichi Oshima, Encarnación G. Vı́llora, Kiyoshi Shimamura — 2015
• Crystal Structure of Non-Doped and Sn-Doped α-(GaFe) 2 O 3 Thin Films.Kentaro Kaneko, Kazuaki Akaiwa, Shizυo Fujita — 2013
• Fabrication of Silicon Oxide Thin Films by Mist Chemical Vapor Deposition Method from Polysilazane and Ozone as SourcesJinchun Piao, Shigetaka Katori, Toshiyuki Kawaharamura — 2012
• Epitaxial growth of γ-Ga2O3 films by mist chemical vapor depositionTakayoshi Oshima, Taishi Nakazono, Akira Mukai — 2012
• Optical, dosimetric, and scintillation properties of pure sapphire crystalsYoshisuke Futami, Takayuki Yanagida, Yutaka Fujimoto — 2014
• Enhanced thermal stability of alpha gallium oxide films supported by aluminum dopingSam‐Dong Lee, Yoshito Ito, Kentaro Kaneko — 2015
• Heteroepitaxial growth of multidomain Ga2O3/sapphire(001) thin films deposited using radio frequency magnetron sputteringHyon Chol Kang — 2014
• Microstructural properties of (112¯0)-oriented hematite–ilmenite solid solution filmsTatsuo Fujii, Tomohiro Mino, Shunsuke Kanamaru — 2015
• Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3Kentaro Kaneko, Itsuhiro Kakeya, Sachio Komori — 2013
• Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3 Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor DepositionHiroshi Ito, Kentaro Kaneko, Shizυo Fujita — 2012
• Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layersNorihiro Suzuki, Kentaro Kaneko, Shizυo Fujita — 2013
• Formation of various phases of gallium oxide films depending on substrate planes and deposition gasesHousei Akazawa — 2016
• Preparation of TaO2 thin films using NbO2 template layers by a pulsed laser deposition techniqueYuji Muraoka, Yasutaka Fujimoto, M. Kameoka — 2016
• Growth characteristics of corundum-structured α-(AlxGa1−x)2O3/Ga2O3 heterostructures on sapphire substratesKentaro Kaneko, Kenta Suzuki, Yoshito Ito — 2016
• Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2 grown by MIST EPITAXY®Masaya Oda, Rie Tokuda, Hitoshi Kambara — 2016
• Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layersRiena Jinno, Takayuki Uchida, Kentaro Kaneko — 2016

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