A survey of acceptor dopants for β-Ga2O3

Keywords

Acceptor, Dopant, Band gap, Doping, Impurity

References

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Cited by

• Structural and electronic properties of Ga2O3-Al2O3 alloysHartwin Peelaers, Joel B. Varley, James S. Speck — 2018
• Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3Jacob R. Ritter, Jesse Huso, Peter T. Dickens — 2018
• Acceptor doping of β-Ga2O3 by Mg and N ion implantationsMan Hoi Wong, Chia-Hung Lin, Akito Kuramata — 2018
• Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantationKornelius Tetzner, Andreas Thies, Eldad Bahat‐Treidel — 2018
• Deep level acceptors of Zn-Mg divalent ions dopants in β-Ga2O3 for the difficulty to p-type conductivityYuanli Su, Daoyou Guo, Junhao Ye — 2019
• Perspective: Ga2O3for ultra-high power rectifiers and MOSFETSS. J. Pearton, F. Ren, Marko J. Tadjer — 2018
• Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescenceYunshan Wang, Peter T. Dickens, Joel B. Varley — 2018
• Deep acceptors and their diffusion in Ga2O3Hartwin Peelaers, John L. Lyons, Joel B. Varley — 2019
• Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donorC. A. Lenyk, N. C. Giles, E. M. Scherrer — 2019
• Review of gallium-oxide-based solar-blind ultraviolet photodetectorsXuanhu Chen, Fangfang Ren, Shulin Gu — 2019
• Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3Marko J. Tadjer, John L. Lyons, Neeraj Nepal — 2019
• First-principles study of self-trapped holes and acceptor impurities in Ga2O3 polymorphsTomoya Gake, Yu Kumagai, Fumiyasu Oba — 2019
• Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga2O3Assil Bouzid, Alfredo Pasquarello — 2019
• Electronic Properties of Ga2O3 PolymorphsJohn L. Lyons — 2019
• Normally-Off Ga2O3 MOSFETs With Unintentionally Nitrogen-Doped Channel Layer Grown by Plasma-Assisted Molecular Beam EpitaxyTakafumi Kamimura, Yoshiaki Nakata, Man Hoi Wong — 2019
• Micro-Opto-Electro-Mechanical Device Based on Flexible β-Ga2O3 Micro-LamellasM. Peres, A.J.S. Fernandes, F.J. Oliveira — 2019
• Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion ImplantationChia-Hung Lin, Yohei Yuda, Man Hoi Wong — 2019
• Cd acceptors in Ga_2O_3, an atomistic viewM. B. Barbosa, J. G. Correia, K. Lorenz — 2019
• Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching PerformanceXing Lü, Xu Zhang, Huaxing Jiang — 2019
• Optical absorption of Fe in doped Ga2O3Suman Bhandari, M. E. Zvanut, Joel B. Varley — 2019

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