Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3
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- Type
- article
- Published
- 1999-09-20
- Cited by
- 216
- References
- 21
- Access
- Open access
- OpenAlex
- https://openalex.org/W1499766313
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:8787044
Keywords
Vacancy defect, Electrical resistivity and conductivity, Conduction band, Thermal conduction, Ionization
References
- Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3
- Chemical Bonds and Bond Energy
- Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
- H2-induced changes in electrical conductance of β-Ga2O3 thin-film systems
- Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O3
- Recombination with larger than bandgap energy at centres on the surface of silicon microstructures
- Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gases
- Cyclic cluster model for calculating defects in solids using the local density approximation
- Electron mobility in single- and polycrystalline Ga2O3
- Relation between Electron Band Structure and Magnetic Bistability of Conduction Electrons in β-Ga2O3
- A combined scanning tunneling microscopy and electron energy loss spectroscopy study on the formation of thin, well-ordered β-Ga2O3 films on CoGa(001)
- Optical properties of β‐Ga2O3 and α‐Ga2O3:Co thin films grown by spray pyrolysis
- Special Points in the Brillouin Zone
- Ga2O3 films for electronic and optoelectronic applications
- Crystal Structure of β‐Ga2O3
- Theoretical study of the luminescent substoichiometric silicon oxides (SiOx)
- Optimization of parameters for semiempirical methods I. Method
- Characterization and crystallite growth of semiconducting high-temperature-stable Ga2O3 thin films
- Étude de quelques propriétés physicochimiques superficielles de l’oxyde de gallium: I. — Examen des défauts de structure et chimisorption de l’oxygène et de l’hydrogène
- Breakthrough in gas sensors: innovative sensor materials open up new markets
Cited by
- Oxygen vacancies and donor impurities in β-Ga2O3
- Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxy
- Enhanced photoluminescence of Ga2O3:Dy3+ phosphor films by Li+ doping
- Electrical compensation by Ga vacancies in Gasub 2Osub 3 thin films
- Optical properties of β-Ga2O3 nanorods synthesized by a simple and cost-effective method using egg white solution
- Optical evidence of intrinsic quantum wells in the transparent conducting oxide β-Ga2O3
- Donor structure and electric transport mechanism inβ−Ga2O3
- Electron paramagnetic resonance characterization of Cr3+ impurities in a β-Ga2O3 single crystal
- Individual β-Ga2O3 nanowires as solar-blind photodetectors
- Achieving fast oxygen response in individual β-Ga2O3 nanowires by ultraviolet illumination
- Design and performance of a simple, room-temperature Ga2O3 nanowire gas sensor
- ADSORPTION OF HYDROGEN ON β-Ga2O3(100): A THEORETICAL STUDY
- Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices
- Electron-spin resonance of transparent conductive oxide β-Ga2O3
- High-pressure x-ray diffraction studies of the nanostructured transparent vitroceramic medium K2O-SiO2-Ga2O3
- Structural, morphological, FTIR and photoluminescence properties of gallium oxide thin films
- A simple method to synthesize β-Ga2O3 nanorods and their photoluminescence properties
- The oxygen vacancy in Ga2O3: a double resonance investigation
- Transparent conducting tin-doped Ga2O3 films deposited on MgAl2O4 (100) substrates by MOCVD
- Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition
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