Phase-change materials for rewriteable data storage.

Keywords

Materials science, Phase change, Amorphous solid, Chemical physics, Phase (matter)

References

• Supercooled liquids and the glass transitionRicardo Bada Hansen — 2001
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• Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurementsI. Friedrich, V. Weidenhof, Walter K. Njoroge — 2000
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• Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memoryNoboru Yamada, Toshiyuki Matsunaga — 2000
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• Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloysJ. Kalb, F. Spaepen, Matthias Wuttig — 2004
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• Nanoelectronics from the bottom up.Wei Lü, Charles M. Lieber — 2007
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• Acceleration of Crystallization Speed by Sn Addition to Ge–Sb–Te Phase-Change Recording MaterialRie Kojima, Noboru Yamada — 2001
• Completely Erasable Phase Change Optical DiskHiroko Iwasaki, Yukio Ide, Makoto Harigaya — 1992
• Phase-change material for use in rewritable dual-layer optical diskNoboru Yamada, Rie Kojima, Mayumi Uno — 2002
• DVD-RAM for all audio/video, PC, and network applicationsIsao Satoh, Noboru Yamada — 2001
• The Dependence of Crystal Structure of Te‐Based Phase‐Change Materials on the Number of Valence ElectronsMeng‐Fei Luo, Matthias Wuttig — 2004
• Kinetics of crystal nucleation in undercooled droplets of Sb- and Te-based alloys used for phase change recordingJ. Kalb, F. Spaepen, Matthias Wuttig — 2005
• Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growthJ. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman — 1995

Cited by

• Amorphous Ge15Te85: density functional, high-energy x-ray and neutron diffraction studyМ Р Битянова — 2012
• Photoswitching of Salicylidene Methylamine: A Theoretical Photodynamics Study政人 山本 — 2014
• Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations.Abderrahim Bouhal — 2013
• Morphology and Electric Conductance Change Induced by Voltage Pulse Excitation in (GeTe)2/Sb2Te3 SuperlatticesJosé Luís Barrio Moya — 2016
• Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical EvidencesKathleen Kennedy Manzo — 2016
• Conformal Coating of a Phase Change Material on Ordered Plasmonic Nanorod Arrays for Broadband All-Optical Switching.S. Frankel, W. Frati, Joshua B. Halpern — 2017
• Revisiting the Si-Te System: SiTe2 Finally Found by Means of Experimental and Quantum-Chemical Techniques.雄騎 松四, 幸 若狭, 浩之 松崎 — 2017
• A High‐On/Off‐Ratio Floating‐Gate Memristor Array on a Flexible Substrate via CVD‐Grown Large‐Area 2D Layer StackingJosé María García Blanco — 2017
• Topological quantum phase transition from mirror to time reversal symmetry protected topological insulator敬二 佐藤 — 2017
• Calculating with light using a chip-scale all-optical abacusДолгова Валентна Ивановна, Н В Крыжановская — 2017
• Distortion of Local Atomic Structures in Amorphous Ge-Sb-Te Phase Change Materials.Catarina Viegas, Tânia Dinis — 2018
• Topological Phase Buried in a Chalcogenide Superlattice Monitored by Helicity-Dependent Kerr Measurement.Sheri Cook — 2018
• Ultrafast interfacial transformation from 2D- to 3D-bonded structures in layered Ge-Sb-Te thin films and heterostructures.Daniel Truempy — 2018
• Verres chalcogénures pour mémoires électriques : Caractérisation par spectroscopie Raman et microscopie en champ procheNathalie Frolet — 2009
• High-Temperature Electrical Characterization of Ge 2 Sb 2 Te 5 Phase Change Memory DevicesFaruk Dirisağlık — 2014
• Material Engineering for Phase Change MemoryDavid Cabrera — 2014
• Contribution à la conception d'architecture de calcul auto-adaptative intégrant des nanocomposants neuromorphiques et applications potentielles. (Adaptive Computing Architectures Based on Nano-fabricated Components)Olivier Bichler — 2012
• Ab initio study of Sb2SexTe3−x (x=0, 1, 2) phase change materialsXuelai Li, Sun Zhimei, Song Zhitang — 2011
• Electronic transport in amorphous phase-change materialsJennifer Luckas — 2012
• Concurrent resistive and capacitive switching of nanoscale TiO2 memristorsThemis Prodromakis, Iulia Salaoru, Ali Khiat — 2012

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