Electronic transport in amorphous phase-change materials
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- Type
- dissertation
- Published
- 2012-09-14
- Cited by
- 5
- References
- 172
- Access
- Open access
- OpenAlex
- https://openalex.org/W94592909
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:169852702
Keywords
Humanities, Physics, Physical chemistry, Chemistry, Philosophy
References
- Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamics.
- Electrical transport and switching in phase change materials
- Crystalline phase-change materials : disorder, medium-range order and electrical switching
- Charge transport in disordered solids with applications in electronics
- Optische Eigenschaften von Phasenwechselmaterialien für zukünftige optische und elektronische Speicheranwendungen
- Phase change materials for non-volatile electronic memories
- Mechanical stresses upon phase transitions
- Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
- The Story of Writing
- Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5
- A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
- A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5
- Atomic structure of amorphous and crystallized Ge15Sb85
- Threshold switching and the on-state in non-crystalline chalcogenide semiconductors: An interpretation of threshold-switching research
- One-Dimensional Thickness Scaling Study of Phase Change Material (Ge_2Sb_2Te_5) Using a Pseudo 3-Terminal Device
- Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
- Crystallization Behavior and Physical Properties of Sb-Excess Ge2Sb2 + x Te5 Thin Films for Phase Change Memory (PCM) Devices
- Prospects of Doped Sb–Te Phase-Change Materials for High-Speed Recording
- Strukturelle und kinetische Aspekte der kombinatorischen Materialsynthese am Beispiel der Phasenwechselmedien
- DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON
Cited by
- The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells
- Impact of defect occupation on conduction in amorphous Ge2Sb2Te5
- Localised states and their capture characteristics in amorphous phase-change materials
- Chalcogenide Ovonic Threshold Switching Selector
- Liquid anomalies and fragility of supercooled antimony.
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