Ultrafast interfacial transformation from 2D- to 3D-bonded structures in layered Ge-Sb-Te thin films and heterostructures.
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Summary
In this work, epitaxially grown thin films consisting of van-der-Waals-bonded Ge-Sb-Te and GeTe/Sb2Te3 based heterostructures are employed as a model system to investigate structural changes induced by a single ns-laser pulse and reveal ultrafast transitions from 2D- bonded layered structures to 3D-bonding structures via a transient molten phase.
- Type
- article
- Published
- 2018-12-13
- Cited by
- 31
- References
- 43
- OpenAlex
- https://openalex.org/W30500030
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:54169144
Keywords
Geology, Lithology, Niger delta, Petroleum, Drilling
References
- Focused high- and low-energy ion milling for TEM specimen preparation
- Modeling of switching mechanism in GeSbTe chalcogenide superlattices
- Amorphization dynamics of Ge2Sb2T35 films under nano- and femtosecond laser pulse irradiation
- Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
- Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
- Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlattices.
- Structures of stable and metastable Ge2Sb2Te5, an intermetallic compound in GeTe-Sb2Te3 pseudobinary systems.
- High Speed Overwritable Phase Change Optical Disk Material
- Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of Gexsb2Te3+x (x=1,2,3) phase change material
- Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials.
- Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases
- Disorder-induced localization in crystalline phase-change materials.
- Phase-change materials for rewriteable data storage.
- Role of vacancies in metal-insulator transitions of crystalline phase-change materials.
- Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry.
- Van der Waals heterostructures
- Temperature dependent resonant X-ray diffraction of single-crystalline Ge2Sb2Te5
- Interfacial phase-change memory.
- Single Pulse Laser‐Induced Phase Transitions of PLD‐Deposited Ge2Sb2Te5 Films
- Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films
Cited by
- Influence of substrate dimensionality on the growth mode of epitaxial 3D-bonded GeTe thin films: From 3D to 2D growth
- Atomic-scale observation of defects motion in van der Waals layered chalcogenide based materials
- Chemical Design Principles for Cache-Type Sc–Sb–Te Phase-Change Memory Materials
- Progressive amorphization of GeSbTe phase-change material under electron beam irradiation
- In situ observations of the reversible vacancy ordering process in van der Waals-bonded Ge-Sb-Te thin films and GeTe-Sb2Te3 superlattices.
- Layer‐Switching Mechanisms in Sb2Te3
- Phase-change materials in electronics and photonics
- Phase change thin films for non-volatile memory applications
- A layered Ge2Sb2Te5 phase change material.
- Strain-induced phase selection in epitaxial Ge2Sb2Te5 thin films
- In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation
- Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
- Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing
- Absence of Partial Amorphization in GeSbTe Chalcogenide Superlattices
- Overview of the Role of Alloying Modifiers on the Performance of Phase Change Memory Materials
- Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
- Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films
- Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices
- Phase change of Ge2Sb2Te5 under terahertz laser illumination
- In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys
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