Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
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Summary
PES results indicate that the combination of reduced carbon contamination while maintaining a Ga2O3 interfacial layer by NH4OH(aq) exposure prior to ALD results in fewer interface traps after Al 2O3 deposition on the GaN substrate.
- Type
- article
- Published
- 2015-06-02
- Cited by
- 49
- References
- 40
- OpenAlex
- https://openalex.org/W307077916
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:5590442
Keywords
Materials science, Atomic layer deposition, X-ray photoelectron spectroscopy, Cathodoluminescence, Analytical Chemistry (journal)
References
- Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
- Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
- GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
- Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
- Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates
- Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
- Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface
- An in situ examination of atomic layer deposited alumina/InAs"100… interfaces
- Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications
- Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices
- Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors
- Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN
- Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission
- Detection of trap activation by ionizing radiation in SiO2 by spatially localized cathodoluminescence spectroscopy
- Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3
- ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors
- Analysis of GaN cleaning procedures
- High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al_2O_3 Gate Insulators
- Simple method for cleaning gallium nitride (0001)
- Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs
Cited by
- Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate.
- Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.
- Comparison of chemical, electronic, and optical properties of Mg-doped AlGaN
- Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer
- Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack
- Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
- Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT
- Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.
- Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces
- Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
- A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN
- Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs
- Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
- Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
- Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics
- GaN metal-oxide-semiconductor devices with ZrO2 as dielectric layers
- High-quality SiNx/p-GaN metal-insulator-semiconductor interface with low-density trap states
- Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
- Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces
- Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study
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