Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates
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- Type
- article
- Published
- 2010-08-15
- Cited by
- 31
- References
- 33
- OpenAlex
- https://openalex.org/W1985089432
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:93360344
Keywords
Epitaxy, Wafer, Materials science, Annealing (glass), Hydride
References
- Synthesis of Bulk GaN Single Crystals Using Na–Ca Flux
- Electrochemistry of silicon and its oxide
- Handbook of X Ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of Xps Data
- Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction
- Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces
- Effects of KOH etching on the properties of Ga-polar n-GaN surfaces
- Deep ultraviolet enhanced wet chemical etching of gallium nitride
- Properties of GaP(001) surfaces treated in aqueous HF solutions
- Determination of wurtzite GaN lattice polarity based on surface reconstruction
- Promoted nitrogen dissolution due to the addition of Li or Ca to Ga-Na melt; some effects of additives on the growth of GaN single crystals using the sodium flux method
- Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System
- Fabrication of a-Plane GaN Substrate Using the Sr–Na Flux Liquid Phase Epitaxy Technique
- Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique
- Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl
- Reconstructions of GaN and InGaN surfaces
- Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique
- Local oxide growth on the n-GaAs surface studied by small area XPS
- Effects of hydrogen during molecular beam epitaxy of GaN
- Ga-metal inclusions in GaN grown on sapphire
- Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System
Cited by
- Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
- Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications
- Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices
- Formation of wide and atomically flat graphene layers on ultraprecision-figured 4H-SiC(0001) surfaces
- Electronic surface and dielectric interface states on GaN and AlGaN
- Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN
- Quantitative low-energy electron diffraction analysis of the GaN(0001̄) (1 × 1) reconstruction
- Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.
- N-methylpyrrolidine-based precursors for chemical vapor deposition of GaNx particles
- Comparison of the Stability of Functionalized GaN and GaP.
- Electrical properties of polycrystalline GaN films functionalized with cysteine and stabilization of GaN nanoparticles in aqueous media.
- Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments
- Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
- Influence of high-temperature postgrowth annealing under different ambience on GaN quantum dots grown via Ga droplet epitaxy
- Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
- Surface defects decorated zinc doped gallium oxynitride nanowires with high photocatalytic activity
- Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism
- The fundamental surface science of wurtzite gallium nitride
- Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition
- Microscopic evidence for the dissociation of water molecules on cleaved GaN(11[combining macron]00).
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