Improved interface properties of GaN metal-oxide-semiconductor device with non-polar plane and AlN passivation layer
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- Type
- article
- Published
- 2016-12-05
- Cited by
- 16
- References
- 21
- OpenAlex
- https://openalex.org/W2560780811
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:99133968
Keywords
Passivation, Materials science, Layer (electronics), Optoelectronics, Substrate (aquarium)
References
- Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
- Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface
- GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
- Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
- Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
- Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
- Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors
- Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices
- Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN
- A single-frequency approximation for interface-state density determination
- AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
- Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
- Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN
- Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
- Surface and interface issues in wide band gap semiconductor electronics
- Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
- O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
- Band offset measurements of the GaN/dielectric interfaces
- Recent advances on dielectrics technology for SiC and GaN power devices
- High dielectric constant oxides
Cited by
- Interface characterization of atomic layer deposited high-k on non-polar GaN
- Interfacial and electrical properties of Al2O3/GaN metal–oxide–semiconductor junctions with ultrathin AlN layer
- Low voltage operation of GaN vertical nanowire MOSFET
- Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer
- AlN passivation effect on Au/GaN Schottky contacts
- Structural characterization of AlN (11-22) films prepared by sputtering and thermal annealing on m-plane sapphire substrates
- Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN
- Interface characterization of Al2O3/m-plane GaN structure
- Aluminum Oxide at the Monolayer Limit via Oxidant‐Free Plasma‐Assisted Atomic Layer Deposition on GaN
- Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors
- Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors
- Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors
- Mechanism of Interface Roughness Contribution in Heteroepitaxy
- A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- High channel mobility at SiO2/GaN interface with different tilt angle trench sidewalls formed by wet etching treatment
- Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems
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