Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission
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- Type
- article
- Published
- 2010-09-13
- Cited by
- 87
- References
- 43
- OpenAlex
- https://openalex.org/W2013572589
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:94972504
Keywords
Gallium, Indium, Synchrotron radiation, Materials science, Oxide
References
- In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
- Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
- Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces
- HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition
- Possible existence of a surplus (oxygen-excess) Ga oxide in the thermal oxide of GaAs
- Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide
- Femtosecond diode laser MOPA system at 920 nm based on asymmetric colliding pulse mode-locking
- Preparation of clean GaAs(100) studied by synchrotron radiation photoemission
- Wet Etching of GaAs(100) in Acidic and Basic Solutions : A Synchrotron-Photoemission Spectroscopy Study
- Model of interface states at III-V oxide interfaces
- XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation
- Photoluminescence and x‐ray photoelectron spectroscopy study of S‐passivated InGaAs(001)
- Sulfide-passivated GaAs(001). I. Chemistry analysis by photoemission and reflectance anisotropy spectroscopies.
- Photoemission studies of the initial interface formation of ultrathin MgO dielectric layers on the Si( 111 ) surface
- Photoelectron spectroscopy study of Ga 3d and As 3d core levels on MBE-grown GaAs surfaces
- An X-ray photoelectron spectroscopy study of the oxides of GaAs
- Properties of GaAs(001) surfaces thermally annealed in vacuum
- Synchrotron radiation photoemission analysis for (NH4)2Sx‐treated GaAs
- X-Ray Photoelectron Spectroscopic Analysis of the Oxide of GaAs
- GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization
Cited by
- Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
- Low-Temperature Atomic-Layer-Deposited High-κ Dielectric for p-Channel In0.7Ga0.3As/GaAs0.35Sb0.65 Heterojunction Tunneling Field-Effect Transistor
- Atomic hydrogen cleaning of In0.53Ga0.47As studied using synchrotron radiation photoelectron spectroscopy
- A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
- Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean In0.53Ga0.47As surface
- Design Strategies for Ultra-high Efficiency Photovoltaics
- The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces.
- Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces
- Interfacial reaction induced strain relaxation in Hf‐silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature
- High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission
- CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
- Chemical and electrical characterization of the HfO2/InAlAs interface
- Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(1 0 0) surfaces
- Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
- GaSb Oxide Thermal Stability Studied by Dynamic- XPS
- Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN
- Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy
- Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces
- Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
- In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
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