Simple method for cleaning gallium nitride (0001)

Keywords

Sulfuric acid, Gallium nitride, Decomposition, Hydrogen peroxide, Torr

References

• Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor depositionO. Ambacher, M. Brandt, R. Dimitrov — 1996
• The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparationV. M. Bermudez, D. D. Koleske, A. E. Wickenden — 1998
• Study of oxygen chemisorption on the GaN(0001)‐(1×1) surfaceV. M. Bermudez — 1996
• Ex Situ and in Situ Methods for Oxide and Carbon Removal from AlN and GaN SurfacesSean W. King, Laura L. Smith, J. P. Barnak — 1995
• Cleaning of AlN and GaN surfacesSean W. King, J. P. Barnak, M. D. Bremser — 1998
• Cleaning of GaN surfacesLaura L. Smith, Sean W. King, R. J. Nemanich — 1996
• Nature of native oxide on GaN surface and its reaction with AlK. Prabhakaran, T. G. Andersson, Katsuhisa Nozawa — 1996
• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD SystemY. Park, B. J. Kim, Jeong‐Whan Lee — 1999

Cited by

• Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.D. M. Zhernokletov, Muhammad Adi Negara, Rathnait Long — 2015
• Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared ApplicationsA. Steckl, Rui Wang, M. Zhong — 2010
• The possibly important role played by Ga2O3 during the activation of GaN photocathodeXiaoqian Fu, Honggang Wang, Junju Zhang — 2015
• Optimization and characterization of III–V surface cleaningZhi Liu, Yun Sun, Francisco Machuca — 2003
• Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaNJohn J. Uhlrich, Lars C. Grabow, Manos Mavrikakis — 2008
• High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathodeXiangyang Guo, Xiaohui Wang, Benkang Chang — 2010
• Effect of Cs adsorption on the photoemission performance of GaAlAs photocathode.Xinlong Chen, Muchun Jin, Yugang Zeng — 2014
• Etch rate and surface morphology control in photoelectrochemical etching of GaNBo Yang, Patrick Fay — 2004
• Preparation of clean GaAs(100) studied by synchrotron radiation photoemissionZhi Liu, Yun Sun, Francisco Machuca — 2003
• Comparison of first and second annealing GaN photocathodeXiaohui Wang, Zhonghao Ge, Guanghui Hao — 2012
• Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxyShawn D. Burnham, Gon Namkoong, D. C. Look — 2008
• Investigation on the role of indium in the removal of metallic gallium from soft and hard sputtered GaN (0001) surfacesBjörn Agnarsson, B. Qi, Karolina Szamota-Leandersson — 2009
• Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemissionYun Sun, Zhi Liu, Francisco Machuca — 2003
• Analysis of GaN cleaning proceduresMmantsae Diale, F.D. Auret, N.G. van der Berg — 2005
• Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodesFrancisco Machuca, Zhi Liu, Yun Sun — 2003
• High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levelsGregor Koblmüller, Rongming Chu, A. Raman — 2010
• Electronic surface and dielectric interface states on GaN and AlGaNBrianna S. Eller, Jia‐Ling Yang, R. J. Nemanich — 2013
• Negative electron affinity group III-nitride photocathode demonstrated as a high performance electron sourceFrancisco Machuca, Zhi Liu, José R. Maldonado — 2004
• Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfacesLars C. Grabow, John J. Uhlrich, T. F. Kuech — 2009
• High-resolution X-ray photoemission study of photo-grown Ga2O3 in GaN/AlGaN/GaN heterostructures on Si substratesBeom Soo Joo, Moonsup Han, Young Jun Chang — 2013

Related papers

• चितलवाना पंचायत समिति में मानव गरीबी सूचकांक - 2016 ( à¤à¤• गà¥à¤°à¤¾à¤® सà¥à¤¤à¤°à¥€à¤¯ à¤à¥Œà¤—ोलिक अधà¥à¤¯à¤¯à¤¨ )Siddhartha Kumar Gaurav, Premlata Swarnkar — 2017
• A GEOMETRIC MEAN IN THE FURUTA INEQUALITYMasatoshi Fujii, Ritsuo Nakamoto — 2002
• Surface Segregation of the Composition in Gallium-Nitride FilmsYu. Ya. Tomashpolsky, V. M. Matyuk, N. V. Sadovskaya — 2019
• Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and PropertiesBirgit Schwenzer, Jerry Hu, Ram Seshadri — 2004
• Gallium Imide, Ga(NH)3/2n, a New Polymeric Precursor for Gallium Nitride PowdersJerzy F. Janik, Richard L. Wells — 1996