SiO2 as an insulator for SiC devices

Keywords

Realisation, Materials science, Oxide, Silicon carbide, Engineering physics

References

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• Internal photoemission spectroscopy of semiconductor-insulator interfacesV. K. Adamchuk, V. V. Afanas’ev — 1992
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• Improvement of SiO2/Si interface by low‐temperature annealing in wet atmosphereNaoki Sano, M. Sekiya, Motohiro Hara — 1995
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• INTERFACE PROPERTIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES ON N-TYPE 6H AND 4H-SICPeter Friedrichs, Edmund P. Burte, Reinhold Schörner — 1996
• Extremely long capacitance transients in 6H‐SiC metal‐oxide‐semiconductor capacitorsJianfeng Pan, James A. Cooper, M. R. Melloch — 1995
• Measurement of n‐type dry thermally oxidized 6H‐SiC metal‐oxide‐semiconductor diodes by quasistatic and high‐frequency capacitance versus voltage and capacitance transient techniquesPhilip G. Neudeck, Soon-won Kang, J. B. Petit — 1994
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• Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiCKentaro Shibahara, Shigehiro Nishino, Hiroyuki Matsunami — 1984
• High Frequency Capacitance‐Voltage Characteristics of Thermally Grown SiO2 Films on β ‐ SiCS. M. Tang, W.B. Berry, R. Kwor — 1990
• Charge trapping and interface state generation in 6H-SiC MOS structuresV. V. Afanas’ev, M. Baßler, Gerhard Pensl — 1995
• Effect of carbon and boron on the high-temperature oxidation of silicon carbideJeffrey W. Fergus, W. L. Worrell — 1995
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• Structural characterization of oxide layers thermally grown on 3C-SiC filmsQ. Wahab, Lars Hultman, M. Willander — 1995
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• Silicon Oxidation Studies: Some Aspects of the Initial Oxidation RegimeE. A. Irene — 1978

Cited by

• A Study on Pre-bonding of 3C-SiC Wafers using CVD OxideShigehiro Nishino — 2002
• Electronic properties of SiO2SiC interfacesV. V. Afanas’ev — 1999
• Microscopic and spectroscopic studies of growth and electronic structure of epitaxial grapheneN. Sharma — 2009
• Non-contact characterization of dielectric conduction on 4H-SiCHelen Benjamin — 2009
• Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structuresK. McDonald, Mingjun Huang, Robert A. Weller — 2000
• Morphological and compositional changes in the SiO2∕SiC interface region induced by oxide thermal growthG. V. Soares, C. Radtke, I. J. R. Baumvol — 2006
• Bonding characteristics of 3C-SiC wafers with hydrofluoric acid for high-temperature MEMS applicationsGwiy‐Sang Chung, Roya Maboudian — 2005
• Generation of interface states in α-SiC/SiO2 by electron injectionV. V. Afanas’ev, A. Stesmans — 2000
• Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2∕SiC structuresG. V. Soares, I. J. R. Baumvol, C. Radtke — 2007
• Phase diagram for the interaction of oxygen with SiCYongwook Song, F. W. Smith — 2002
• Growth of SiO2 on SiC by dry thermal oxidation: mechanismsI. Vickridge, Jean‐Jacques Ganem, Yasushi Hoshino — 2007
• Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profilingC. Radtke, I. J. R. Baumvol, F. C. Stedile — 2003
• Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles studyToru Akiyama, Kohji Nakamura, Tomonori Ito — 2013
• Effects of ion irradiation in the thermal oxidation of SICC. Radtke, I. J. R. Baumvol, F. C. Stedile — 2002
• Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durationsBanu Poobalan, Jeong Hyun Moon, Sangcheol Kim — 2014
• Effects of wet-oxidized 4H-SiC annealed in HNO3/H2O vapourBanu Poobalan, Jeong Hyun Moon, Sangcheol Kim — 2013
• Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structuresH. Kobayashi, Kentaro Imamura, W.-B. Kim — 2010
• Presence and Resistance to Wet Etching of Silicon Oxycarbides at the SiO2 / SiC InterfaceSilma Alberton Corrêa, C. Radtke, G. V. Soares — 2008
• Effect of postdeposition annealing on electrical properties of RF‐magnetron sputtered CeOx gate on 4H‐silicon carbideSooKiet Chuah, Kuan Yew Cheong, Zainovia Lockman — 2011
• Effects of Low‐Pressure Oxidation on the Surface Composition of Single Crystal Silicon CarbideYongwei Song, Frederick W. Smith — 2005

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