Silicon Oxidation Studies: Some Aspects of the Initial Oxidation Regime

Keywords

Thermal oxidation, Transmission electron microscopy, Ellipsometry, Dielectric, Materials science

References

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Cited by

• Ultrathin silicon wafer bonding physics and applicationsMichael H. Beggans — 2001
• SiO2 as an insulator for SiC devicesC. Harris, В. В. Афанасьев — 1997
• Oberflächenpassivierung von kristallinen Silizium-SolarzellenBernd Bitnar — 1998
• Device quality low temperature gate oxide growth using electron cyclotron resonance plasma oxidation of siliconVishwas Jaju — 2008
• Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15Cleva W. Ow‐Yang, Yuzo Shigesato, David C. Paine — 2000
• A study of the breakdown testing of thermal silicon oxides and the effects of preoxidation surface treatmentDah-Bin Kao, J. M. deLarios, C. R. Helms — 1989
• A high quality stacked thermal/LPCVD gate oxide for ULSIR. Moazzami, Chia-Wei Hu — 1991
• Growth kinetics of thin silicon dioxide in a controlled ambient oxidation systemK.K. Ng, W. J. Polito, J. R. Ligenza — 1984
• On the structure of thin plasma-treated thermal SiO2 filmsL. Popova, E. Atanassova, S. K. Peneva — 1988
• Growth of thin Si oxide in a cyclic oxygen plasma environment below 200 °CJaehyun Moon, Yong-Hae Kim, Choong‐Heui Chung — 2008
• Impact of Various Polysilicon Deposition Process on Thin Gate-Oxide Properties in Submicron CMOS TechnologyP.K. Roy, T. Kook, V. Kannan — 1990
• Thermal‐oxidation‐induced strain in 31P+‐implanted Si〈100〉L. Zsoldos, G. Pető, V. Schiller — 1990
• Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ dry cleaning of Si surfaceRavi Kumar Chanana, Har Narayan Upadhyay, R. Dwivedi — 1995
• Silicon oxidation studies: A revised model for thermal oxidationE. A. Irene — 1983
• Growth kinetics of ultrathin SiO2 films fabricated by rapid thermal oxidation of Si substrates in N2OW. Ting, Hyunsang Hwang, John Lee — 1991
• Oxidation of silicon in plasma afterglows: New model of oxide growth including recombination of diffusing O atomsJozef Peeters, Li Li — 1993
• Breakdown of SiO2 thin films grown in dry O2M. Bădilă, C. Pavelescu, Ovidiu Popa — 1990
• Kinetic data and mechanistic model for the reaction between Si and CuClGuy Weber, D. Viale, H. Souha — 1989
• Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline SiliconH. Krause, Martin Schell, H.-Chr. Golinsky — 1984
• Anodic oxides on siliconH. J. Lewerenz — 1992

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