Bonding characteristics of 3C-SiC wafers with hydrofluoric acid for high-temperature MEMS applications

Keywords

Materials science, Surface roughness, Plasma-enhanced chemical vapor deposition, Hydrofluoric acid, Wafer

References

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• Evaluation of MEMS materials of construction for implantable medical devices.Geoffrey Kotzar, Mark Freas, Phillip B. Abel — 2002
• Studies on SiO2–SiO2 bonding with hydrofluoric acid. Room temperature and low stress bonding technique for MEMSHiroyuki Nakanishi, T. Nishimoto, Ryuta Nakamura — 2000
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Cited by

• Fabrication of SiCN microstructures for super-high temperature MEMS using PDMS mold and its characteristicsGwiy-Sang Chung — 2006
• Fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization and its characteristicsGwiy‐Sang Chung — 2006
• Preparation and characterization of freestanding SiC(Ti, B) films derived from polycarbosilane with TiN and B as additivesRongqian Yao, Zude Feng, Lifu Chen — 2012
• Characteristics of SiCN microstructures for harsh environment and high-power MEMS applicationsGwiy‐Sang Chung — 2007
• SiC sensors: a reviewNicolas G. Wright, Alton B. Horsfall — 2007
• Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applicationsGwiy-Sang Chung, Kyu-Hyung Yoon — 2008
• Rapid bonding of Pyrex glass microchipsYoshitake Akiyama, Keisuke Morishima, Atsuna Kogi — 2007
• 3C-SiC films on insulated substrates for high-temperature electrostatic-based resonatorsMarcel Placidi, Amador Pérez‐Tomás, Marcin Zieliński — 2010
• A note of microelectromechanical systemsJiemin Zhao — 2009
• Advances in silicon carbide science and technology at the micro- and nanoscalesRoya Maboudian, Carlo Carraro, Debbie G. Senesky — 2013
• The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A ReviewHoang‐Phuong Phan, Dzung Viet Dao, Koichi Nakamura — 2015
• Fabrication of bonded SiC structure with cavity based on direct bonding process for MEMS device applicationsTing Liang, Xinxin Wang, Pinggang Jia — 2017
• Formation of silicon carbide nanowire on insulator through direct wet oxidationHoang‐Phuong Phan, Ginnosuke Ina, Toan Dinh — 2017
• Surface oxidation behavior in air and O2-H2O-Ar atmospheres of continuous freestanding SiC films derived from polycarbosilaneRongqian Yao, Yinong Zheng, Liang Liao — 2018
• EPR Spectroscopic Studies of Neutron-Irradiated Nanocrystalline Silicon Carbide (3C-SiC)Elchin M. Huseynov, Anže Jazbec — 2018
• Direct bonding of silicon carbide with hydrofluoric acid treatment for high-temperature pressure sensorsJian Li, Yonggang Jiang, Hongchang Li — 2020
• Nanostrain Resolution Strain Sensing by Monocrystalline 3C-SiC on SOI Electrostatic MEMS ResonatorsLuca Belsito, Matteo Bosi, F. Mancarella — 2020
• Hydrophilic Direct Bonding of MgO/MgO for High-Temperature MEMS DevicesJia Liu, Pinggang Jia, Jiashun Li — 2020
• Fabrication of SiC Sealing Cavity Structure for All-SiC Piezoresistive Pressure Sensor ApplicationsLihuan Zhao, Haiping Shang, Dahai Wang — 2020
• Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating ratesElchin M. Huseynov, T. G. Naghiyev — 2022

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