Formation of silicon carbide nanowire on insulator through direct wet oxidation
Explore this paper's citation graph
- Type
- article
- Published
- 2017-06-01
- Cited by
- 7
- References
- 21
- Access
- Open access
- OpenAlex
- https://openalex.org/W2598030620
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:100057874
Keywords
Materials science, Silicon carbide, Thermal oxidation, Nanowire, Silicon
References
- Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching
- Bonding characteristics of 3C-SiC wafers with hydrofluoric acid for high-temperature MEMS applications
- Orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress
- A silicon carbide lollipop
- Fabrication of low defect density 3C-SiC on SiO2 structures using wafer bonding techniques
- Oxidized Silicon-On-Insulator (OxSOI) from bulk silicon: a new photonic platform
- PECVD SiC-SiO2-SiC horizontal slot waveguides for sensing photonics devices
- Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications
- Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review
- Characterization of n-type beta -SiC as a piezoresistor
- Variation of the Oxidation Rate of Silicon Carbide with Water‐Vapor Pressure
- Advances in silicon carbide science and technology at the micro- and nanoscales
- The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
- Piezoresistive effect of p-type single crystalline 3C–SiC on (111) plane
- High thermosensitivity of silicon nanowires induced by amorphization
- Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating
- A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam
- Silicon carbide based surface plasmon resonance waveguide sensor with a bimetallic layer for improved sensitivity
- SiC-on-insulator on-chip photonic sensor in a radiative environment
- Characterization of n-Type p-Sic as a Piezoresistor
Cited by
- Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications.
- Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor
- Ultra-thin LPCVD silicon carbide membrane: A promising platform for bio-cell culturing
- Catalytic synthesis of SiC nanowires in an open system
- Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses
- Ultrahigh growth rate-induced thick 3C-SiC heteroepitaxial layers on 4H-SiC and its oxidation characteristics
- SiC Micro-Hot Wires for Flow Measurement in Harsh Environments
- Ultrahigh Growth Rate-Induced Thick 3c-Sic Heteroepitaxial Layers on 4h-Sic and its Oxidation Characteristics
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