Three-dimensional growth rate modeling and simulation of silicon carbide thermal oxidation

Keywords

Silicon carbide, Thermal oxidation, Silicon, Materials science, Interpolation (computer graphics)

References

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Cited by

• Growth rates of dry thermal oxidation of 4H-silicon carbideVito Šimonka, Andreas Hössinger, Josef Weinbub — 2016
• Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NOZhanwei Shen, Feng Zhang, Sima Dimitrijev — 2017

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