Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
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Summary
This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
- Type
- review
- Published
- 2012-11-01
- Cited by
- 14,813
- References
- 175
- Access
- Open access
- OpenAlex
- https://openalex.org/W2115786064
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:6261931
Keywords
Nanoelectronics, Materials science, Graphene, Nanotechnology, Electronics
References
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- Phonons in single-layer and few-layer MoS2
- Fundamentals of Digital Logic with VHDL Design
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- Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene
- Single-layer MoS2 phototransistors.
- Limits on charge carrier mobility in suspended graphene due to flexural phonons.
- Effect of high- κ gate dielectrics on charge transport in graphene-based field effect transistors
- The growth and morphology of epitaxial multilayer graphene
- Work Function and Photothreshold of Layered Metal Dichalcogenides
- Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors
- Self-assembled lamellar MoS2, SnS2 and SiO2 semiconducting polymer nanocomposites
- Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
- Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature.
- High-mobility field-effect transistors based on transition metal dichalcogenides
- Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
- State-of-the-art graphene high-frequency electronics.
- Electrodeposited semiconducting molybdenum selenide films. II. Optical, electrical, electrochemical and photoelectrochemical solar cell studies
- Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
Cited by
- Synthesis and Characterization of Large Area Few-layer MoS2 and WS2 Films
- Intrinsic structural defects in monolayer molybdenum disulfide.
- Defect‐Rich MoS2 Ultrathin Nanosheets with Additional Active Edge Sites for Enhanced Electrocatalytic Hydrogen Evolution
- Hopping transport through defect-induced localized states in molybdenum disulphide
- Properties of Individual Dopant Atoms in Single‐Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity
- Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
- An ab initio study of transition metals doped with WSe2 for long-range room temperature ferromagnetism in two-dimensional transition metal dichalcogenide
- Surface energy engineering for tunable wettability through controlled synthesis of MoS2.
- Influence of strain and metal thickness on metal-MoS₂ contacts.
- Fabrication of two-dimensional nanosheets via water freezing expansion exfoliation
- Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers
- The Strain Rate Effect on the Buckling of Single-Layer MoS2
- Facile fabrication of wafer-scale MoS2 neat films with enhanced third-order nonlinear optical performance.
- Tailoring Nanoscale Friction in MX2 Transition Metal Dichalcogenides.
- Structure Identification of Two-Dimensional Colloidal Semiconductor Nanocrystals with Atomic Flat Basal Planes.
- Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations.
- Layer-by-layer assembly of versatile nanoarchitectures with diverse dimensionality: a new perspective for rational construction of multilayer assemblies.
- Excitation mechanism of A1g mode and origin of nonlinear temperature dependence of Raman shift of CVD-grown mono- and few-layer MoS2 films.
- Aligned MoOx /MoS2 Core-Shell Nanotubular Structures with a High Density of Reactive Sites Based on Self-Ordered Anodic Molybdenum Oxide Nanotubes.
- Targeted Synthesis of 2H‐ and 1T‐Phase MoS2 Monolayers for Catalytic Hydrogen Evolution
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