Hopping transport through defect-induced localized states in molybdenum disulphide
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Summary
This study provides direct evidence that sulphur vacancies exist in molybdenum disulphide, and introduces localized donor states inside the bandgap, suggesting that the low-carrier-density transport is dominated by hopping via these localized gap states.
- Type
- article
- Published
- 2013-09-15
- Cited by
- 1,107
- References
- 50
- Access
- Open access
- OpenAlex
- https://openalex.org/W24149969
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:12240882
Keywords
Political science
References
- Practical considerations of permutation entropy
- Atomic-scale edge structures on industrial-style MoS2 nanocatalysts.
- Integrated circuits based on bilayer MoS₂ transistors.
- First-principles study of the phonon-limited mobility in n-type single-layer MoS2
- Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene
- Single-layer MoS2 phototransistors.
- High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
- Projector augmented-wave method.
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide.
- Conductance fluctuations and higher order moments of a disordered carbon nanotube
- High performance multilayer MoS2 transistors with scandium contacts.
- Generalized Gradient Approximation Made Simple.
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
- Designing electrical contacts to MoS2 monolayers: a computational study.
- Charge Transport in Disordered Organic Materials and Its Relevance to Thin‐Film Devices: A Tutorial Review
- Electron transport in disordered graphene nanoribbons.
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
- Two-dimensional semiconductors: recent progress and future perspectives
- Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors
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- Short channel field-effect transistors from ultrathin GaTe nanosheets
- Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform
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