Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature.

Explore this paper's citation graph

Summary

Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable, and these FET devices can be used as gas sensors to detect nitrous oxide.

Type
article
Published
2012-01-09
Cited by
1,453
References
38
Access
Open access

Keywords

Fabrication, Materials science, Field-effect transistor, Optoelectronics, Transistor

References

Cited by

Related papers