Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature.
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Summary
Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable, and these FET devices can be used as gas sensors to detect nitrous oxide.
- Type
- article
- Published
- 2012-01-09
- Cited by
- 1,453
- References
- 38
- Access
- Open access
- OpenAlex
- https://openalex.org/W1973130783
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:19442399
Keywords
Fabrication, Materials science, Field-effect transistor, Optoelectronics, Transistor
References
- Exfoliated MoS2 Nanocomposite as an Anode Material for Lithium Ion Batteries
- Graphene-based nitrogen dioxide gas sensors
- Centimeter-long and large-scale micropatterns of reduced graphene oxide films: fabrication and sensing applications.
- Ultrathin topological insulator Bi2Se3 nanoribbons exfoliated by atomic force microscopy.
- Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
- Mechanically-Exfoliated Stacks of Thin Films of Bi2Te3 Topological Insulators with Enhanced Thermoelectric Performance
- Nanotube molecular wires as chemical sensors
- Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
- Toward practical gas sensing with highly reduced graphene oxide: a new signal processing method to circumvent run-to-run and device-to-device variations.
- InAs nanowire transistors as gas sensor and the response mechanism.
- Extreme oxygen sensitivity of electronic properties of carbon nanotubes
- Insulating behavior in ultrathin bismuth selenide field effect transistors.
- High activity catalyst from exfoliated MoS2
- Atomically thin MoS₂: a new direct-gap semiconductor.
- Hydrodesulfurization of dibenzothiophene over exfoliated MoS2 catalyst
- Detection of NO2 down to ppb levels using individual and multiple In2O3 nanowire devices
- Single-layer MoS2 transistors.
- Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects
- Mechanism of NO2 detection in carbon nanotube field effect transistor chemical sensors
- Adsorption of H 2 O , N H 3 , CO, N O 2 , and NO on graphene: A first-principles study
Cited by
- Synthesis and Characterization of Large Area Few-layer MoS2 and WS2 Films
- Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2
- Intrinsic structural defects in monolayer molybdenum disulfide.
- Bifunctional sensing characteristics of chemical vapor deposition synthesized atomic-layered MoS2.
- Toward breath analysis on a chip for disease diagnosis using semiconductor-based chemiresistors: recent progress and future perspectives.
- Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors
- Layer number dependence of the work function and optical properties of single and few layers MoS2: effect of substrate
- Equilibrium densities of intrinsic defects in transition metal diselenides of molybdenum and tungsten.
- An electrochemical route to MoS2 nanosheets for device applications
- The electrical transport study of graphene nanoribbons and 2D materials beyond graphene
- Magnetic properties of MoS 2 : Existence of ferromagnetism
- Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition
- Synthesis of two-dimensional materials for beyond graphene devices
- High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
- Mechanism of charge transfer and its impacts on Fermi-level pinning for gas molecules adsorbed on monolayer WS2.
- Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules
- The role of van der Waals interactions and nuclear quantum effects in soft layered materials
- Comparative Study on Electronic Structures of Sc and Ti Contacts with Monolayer and Multilayer MoS2.
- Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy
- Sequential structural and optical evolution of MoS2 by chemical synthesis and exfoliation
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