Influence of strain and metal thickness on metal-MoS₂ contacts.
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Summary
It is shown that the results can be rationalized by accounting for second-nearest-neighbor effect that couples MoS2 with the subsurface metal layers, and their evolution with the number of deposited metal layers is markedly different between Pd and Pt, and at variance with the d-band model.
- Type
- article
- Published
- 2014-09-05
- Cited by
- 45
- References
- 47
- OpenAlex
- https://openalex.org/W2027473750
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:39173753
Keywords
Monolayer, Heterojunction, Materials science, Polarizability, Metal
References
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Cited by
- Collective electronic behaviors of laterally heterostructured armchair MoS2-NbS2 nanoribbons
- Density Functional Theory Study of Nucleation and Growth of Pt Nanoparticles on MoS2(001) Surface
- Epitaxial growth of Pd nanoparticles on molybdenum disulfide by sonochemistry and its effects on electrocatalysis
- Polarizabilities and van der Waals C6 coefficients of fullerenes from an atomistic electrodynamics model: Anomalous scaling with number of carbon atoms.
- Trends in the Adsorption and Growth Morphology of Metals on the MoS2(001) Surface
- Computational study of interfaces and edges of 2D materials
- Nature of the cubic to tetragonal phase transition in methylammonium lead iodide perovskite.
- Contact engineering for 2D materials and devices.
- End-to-end Symmetry Preserving Inter-atomic Potential Energy Model for Finite and Extended Systems
- Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
- Room-temperature epitaxy of metal thin films on tungsten diselenide
- Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors
- WSe2 Photovoltaic Device Based on Intramolecular p-n Junction.
- High Activity toward the Hydrogen Evolution Reaction on the Edges of MoS2-Supported Platinum Nanoclusters Using Cluster Expansion and Electrochemical Modeling
- Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges.
- Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors.
- Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing
- Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
- Electrical contacts to few-layer MoS2 with phase-engineering and metal intercalation for tuning the contact performance.
- Crystallographic influences on the nanomanipulation of gold nanoclusters on molybdenum disulfide
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