Auger transitions in semiconductors and their computation

Keywords

Auger, Semiconductor, Computation, Atomic physics, Materials science

References

• Overlap integrals for Auger recombination in direct-bandgap semiconductors: calculations for conduction and heavy-hole bands in GaAs and InPM G Burt, S. Brand, C. Smith — 1984
• Overlap integrals for Auger recombination in direct gap III-V semiconductors: calculations for conduction and heavy hole band states with wavevectors along the (001) direction in GaAs and InPM G Burt, C. Smith — 1984
• The internal photoelectric effect in InSb with L-band participationA. R. Beattie — 1983
• The Auger-effect in Hg1−xCdxTeRolf R. Gerhardts, Ralf Dornhaus, Günter Nimtz — 1978
• Band structure of indium antimonideE. O. Kane — 1957
• Electron scattering in InSbHannelore Ehrenreich — 1957
• Calculations of overlap integrals for Auger processes involving direct band gap semiconductorsS. Brand, R. A. Abram — 1984
• Auger effect in semiconductorsA. R. Beattie, P. T. Landsberg — 1959
• Recombination Processes in p-Type Indium AntimonideR. N. Zitter, A. J. Strauss, Alfred E. Attard — 1959
• Auger recombination in direct-gap semiconductors: band-structure effectsAlbert Haug — 1983
• Auger recombination in InGaAsPAlbert Haug — 1983
• Effect of anisotropic band parameters on band-to-band Auger recombination in In 0.72 Ga 0.28 As 0.6 P 0.4Masumi Takeshima — 1984
• Auger recombination rate in InGaAsP lasersM G Burt — 1982

Cited by

• Hole impact ionization rates in InP and In0.53Ga0.47AsA. R. Beattie, R. A. Abram, P. Scharoch — 1992
• A method of determining the overlap integrals used in calculations of Auger transition rates in semiconductorsP. Scharoch, R. A. Abram — 1988
• Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAs1–xSbx strained layer superlattices at 300 KC. M. Ciesla, M. J. Pullin, I. Galbraith — 1997
• Electron impact ionization in p-type degenerate narrow-gap semiconductors with a Kane band dispersion lawА. В. Дмитриев, Andrey B. Evlyukhin — 1997
• Calculation of Auger Lifetimes in HgCdTeFrancesco Bertazzi, Michele Goano, E. Bellotti — 2011
• Impact ionization rate calculations in wide band gap semiconductorsDavid C. Harrison, R. A. Abram, S. Brand — 1999
• Auger recombination in Cd0.2Hg0.8Te and the effect of background radiation on its measurementA. R. Beattie — 1987
• Unthreshold Impact Ionization by Virtual Electrons in Semiconductors under Streamer Discharge ExcitationS. V. Voitikov — 1991
• Impact ionization: thresholds, anti-thresholds and proper countingA. R. Beattie — 1992
• The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAsS P Wilson, S. Brand, A. R. Beattie — 1993
• Band-to-band Auger recombination in semiconductorsAlbert Haug — 1988
• Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsPA. R. Beattie, R. A. Abram, P. Scharoch — 1990
• Auger lifetime in narrow gap semiconductorsFrancesco Bertazzi, Michele Goano, E. Bellotti — 2010
• A lifetime in Auger transitionsA. R. Beattie — 1988
• An analytic approximation with a wide range of applicability for electron initiated Auger transitions in narrow‐gap semiconductorsA. R. Beattie, A. M. White — 1996
• Impact ionisation rate and soft energy thresholds for anisotropic parabolic band structuresA. R. Beattie — 1988
• Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectorsC. R. Pidgeon, C. M. Ciesla, B. N. Murdin — 1997
• THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaASS P Wilson, S. Brand, A. R. Beattie — 1993
• The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds and anti-thresholds in indium phosphideS P Wilson, S. Brand, A. R. Beattie — 1993
• Large nonlinear refraction in InSb at 10 μm and the effects of Auger recombinationV. Dubikovskiy, David J. Hagan, Eric W. Van Stryland — 2008

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