Band structure of indium antimonide
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- Type
- article
- Published
- 1957-01-01
- Cited by
- 2,923
- References
- 16
- OpenAlex
- https://openalex.org/W1973825526
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:93521526
Keywords
Indium antimonide, Germanium, Semimetal, Effective mass (spring–mass system), Band gap
References
- Cyclotron and Spin Resonance in Indium Antimonide
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals
- Energy band structure in p-type germanium and silicon
- Transverse Hall and Magnetoresistance Effects inp-Type Germanium
- Impurity Band in Semiconductors with Small Effective Mass
- Infrared Absorption of Indium Antimonide
- Self-Consistent Field Calculations for Zn, Ga,Ga+,Ga+++, As,As+,As++,As+++
- Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors
- Spin-Orbit Coupling Effects in Zinc Blende Structures
- Theory of the Infrared Absorption of Carriers in Germanium and Silicon
- Hall Effect and Conductivity of InSb
- Infrared Absorption of Indium Antimonide
- Infrared Absorption of Germanium near the Lattice Edge
- Symmetry Properties of the Energy Bands of the Zinc Blende Structure
- Anomalous Optical Absorption Limit in InSb
- ENERGY LEVELS OF A DISORDERED ALLOY
- Infrared Absorption in Indium Antimonide
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- Spectroscopy of colloidal quantum dots of controlled shape and size
- Characterization of Hg1−xCdxTe heterostructures by thermoelectric measurements
- Mikroskopische Theorie der Spinrelaxation und Spindephasierung in Halbleiter-Quantenstrukturen
- Indium Nitride: An Investigation of Growth, Electronic Structure and Doping
- Etude de puits quantiques semiconducteurs par microscopie et spectroscopie à effet tunnel
- The electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide
- Spin splitting and collective effects in InAs/AlSb quantum well heterostructures
- Electro-optic effects in GaAsAlGaAs multiple quantum well structures
- Band gap bowing parameter of In1−xAlxN
- A simple theoretical analysis of the effective electron mass in NIPI structures of non-parabolic semiconductors
- Relaxation time for ionized impurity scattering in compensated n-type Hg1-xCdxTe near x=0.2
- Refractive index of quaternary In1−xGaxAsyP1−y lattice matched to InP
- Theoretical analysis of the effective electron mass inn-channel inversion layers on ternary semiconductors
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