An analytic approximation with a wide range of applicability for electron initiated Auger transitions in narrow‐gap semiconductors

Keywords

Auger, Degenerate energy levels, Semiconductor, Auger effect, Impact ionization

References

• A method of determining the overlap integrals used in calculations of Auger transition rates in semiconductorsP. Scharoch, R. A. Abram — 1988
• Band structure of indium antimonideE. O. Kane — 1957
• Auger transitions in semiconductors and their computationA. R. Beattie — 1985
• Electron scattering in InSbHannelore Ehrenreich — 1957
• Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductorsA. R. Beattie, P. Scharoch, R. A. Abram — 1989
• Impact ionization: thresholds, anti-thresholds and proper countingA. R. Beattie — 1992
• Minority carrier lifetimes in ideal InGaSb/InAs superlatticesC. H. Grein, Paul M. Young, Hannelore Ehrenreich — 1992
• Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsPA. R. Beattie, R. A. Abram, P. Scharoch — 1990
• Impact ionisation rate and soft energy thresholds for anisotropic parabolic band structuresA. R. Beattie — 1988
• Auger recombination in direct-gap semiconductors: band-structure effectsAlbert Haug — 1983
• Heavily doped semiconductors and devices.R. A. Abram, G.J. Rees, B.L.H. Wilson — 1978
• A numerical analysis of Auger processes in p‐type GaAsW. Bardyszewski, David Yevick — 1985
• The characteristics of minority-carrier exclusion in narrow direct gap semiconductorsA. M. White — 1985
• Chapter 5 Effects of Heavy Doping and High Excitation on the Band Structure of Gallium ArsenideR. Abram — 1993

Cited by

• InSb1-xNx growth and devicesT. Ashley, T. M. Burke, G.J. Pryce — 2003
• Mid-infrared In1−xAlxSb/InSb heterostructure diode lasersT. Ashley, C.T. Elliott, Richard Jefferies — 1997
• Heat Transfer Physics: AbbreviationsMassoud Kaviany — 2008
• Recombination processes in midinfrared AlxIn1-xSb light-emitting diodesBehrooz Mirza, G. R. Nash, Stuart Smith — 2008
• Mid-infrared AlxIn1−xSb light-emitting diodesMary K. Haigh, G. R. Nash, Stuart Smith — 2007
• Auger recombination dynamics of InxGa1-xSbP. C. Findlay, C. R. Pidgeon, H.P.M. Pellemans — 1999
• Investigation of Scaling of InSb MOSFETs Through Drift–Diffusion SimulationEdin Sijerčić, Branimir Pejčinović — 2006
• Accurate calculation of Auger rates in infrared materialsS. Krishnamurthy, A. Sher, A.-B. Chen — 1997
• An analytic approximation with a wide range of applicability for band-to-band radiative transition rates in direct, narrow-gap semiconductorsA. R. Beattie, A. M. White — 1997
• Key issues for mid–infrared emissionB. N. Murdin — 2001
• HgCdTe detectors operating above 200 KNeil T. Gordon, David J. Lees, Gavin J. Bowen — 2006
• Auger recombination in long-wavelength infrared InNxSb1−x alloysB. N. Murdin, M. Kamal‐Saadi, Andrew J. Lindsay — 2001
• The InSb Auger recombination coefficient derived from the IR-FIR dynamical plasma reflectivityS. Marchetti, M. Martinelli, R. Simili — 2001
• Towards background-limited, room-temperature, infrared photon detectors in the 3–13 μm wavelength rangeC.T. Elliott, Neil T. Gordon, A. M. White — 1999
• HgCdTe infrared detector material: history, status and outlookAntoni Rogalski — 2005
• Optical modelling of cone concentrators for positive and negative IR emittersT. Ashley, Neil T. Gordon, T. J. Phillips — 1999
• Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxyC. H. Swartz, Sandeep Chandril, Randy P. Tompkins — 2006
• Simulation of INSB Devices using Drift-Diffusion EquationsEdin Sijerčić, K. Mueller, Branimir Pejčinović — 2005
• Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectorsC. R. Pidgeon, C. M. Ciesla, B. N. Murdin — 1997
• Long-wavelength HgCdTe on silicon negative luminescent devicesMary K. Haigh, G. R. Nash, Neil T. Gordon — 2005

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