Band-to-band Auger recombination in semiconductors

Keywords

Auger effect, Semiconductor, Auger, Recombination, Band gap

References

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Cited by

• Evidence of Phonon-Assisted Auger Recombination and Multiple Exciton Generation in Semiconductor Quantum Dots Revealed by Temperature-Dependent Phonon Dynamics.Gamel O. Wiredu — 2014
• Ultrafast spectroscopy of charge separation, transport and recombination processes in functional materials for thin-film photovoltaicsChristian Wehrenfennig — 2014
• On the temperature dependence of InGaAsP semiconductor lasersAlbert Haug — 1996
• Accurate calculation of Auger rates in infrared materialsS. Krishnamurthy, A. Sher, A.-B. Chen — 1997
• A Monte Carlo method for study of Auger recombination effects in semiconductorsW.W. Lui, Yuzo Yoshikuni, Takayuki Yamanaka — 1993
• Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasersLynford L. Goddard, Seth R. Bank, Mark A. Wistey — 2005
• Breakdown of the k-conservation rule in quantized Auger recombination in Si_1-xGe_x nanocrystalsKei Ueda, Takeshi Tayagaki, M. Fukuda — 2012
• Calculation of Auger recombination in long-wavelength lasersMark Silver, Eoin P. O’Reilly, Alfred R. Adams — 1997
• Mid-infrared GaSb-InAs-based multiple quantum well lasersА. Н. Баранов, Nicolas Bertru, Y. Cuminal — 1998
• Auger heating of carriers in GaAs / AlAs heterostructuresPaola Borri, Simone Ceccherini, M. Gurioli — 1997
• Optimum separate confinement structure for midinfrared HgCdTe heterostructure lasersJasprit Singh, R. Zucca — 1992
• Carrier multiplication in semiconductor nanocrystals: influence of size, shape, and composition.Lázaro A. Padilha, John T. Stewart, Richard L. Sandberg — 2013
• Band‐to‐band recombination in Ga0.5In0.5PUwe Strauß, W. W. Rühle, H. J. Queisser — 1994
• High‐power conversion efficiency in a strained InGaAs/AlGaAs quantum well laserD. P. Bour, G. A. Evans, D. B. Gilbert — 1989
• Charge-carrier dynamics in vapour-deposited films of the organolead halide perovskite CH3NH3PbI3-xClxChristian Wehrenfennig, Mingzhen Liu, Henry J. Snaith — 2014
• The mechanisms of electronic excitation of rare earth impurities in semiconductorsI. N. Yassievich, Lionel C. Kimerling — 1993
• On the Theory of Auger Recombination in Slightly Compensated Heavily Doped SemiconductorsDoan Nhat Quang — 1991
• Auger recombination in quantum well InGaAsAlbert Haug — 1990
• Universal size-dependent trend in auger recombination in direct-gap and indirect-gap semiconductor nanocrystals.István Robel, Ryan Gresback, Uwe Kortshagen — 2009
• Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectorsC. R. Pidgeon, C. M. Ciesla, B. N. Murdin — 1997

Related papers

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• A comparison of dominant recombination mechanisms in n-type InAsSb materialsR. Lal, P. Chakrabarti — 2006
• Accurate interband-Auger-recombination rates in silicon.David B. Laks, G. F. Neumark, Sokrates T. Pantelides — 1990
• Superposition Principle in Auger Recombination of Charged and Neutral Multicarrier States in Semiconductor Quantum Dots.Kaifeng Wu, Jaehoon Lim, Victor I. Klimov — 2017
• Anomalous Auger Recombination in PbSe.Xie Zhang, Jimmy‐Xuan Shen, Chris G. Van de Walle — 2020
• Auger recombination in InGaAsPAlbert Haug — 1983
• Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type SiliconH. Jung, Kenji Taniguchi Kenji Taniguchi, Chihiro Hamaguchi Chihiro Hamaguchi — 1995
• The Phonon-assisted Auger Effect in SemiconductorsD. M. Eagles — 1961
• Auger recombination in long-wave infrared InAs/InAsSb type-II superlatticesB. V. Olson, C. H. Grein, J. K. Kim — 2015
• Theoretical Investigation of Auger Recombination in PbSnTe StructuresFabian Lemke, M. Mocker — 1991