Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy.
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Summary
Network of inversion domain boundary (DB) defects are observed both in the top and bottom layers of BL MoSe2, and often they are seen spatially correlated such that one is on top of the other, and quantum confinement of the defect states is indicated.
- Type
- article
- Published
- 2015-06-10
- Cited by
- 83
- References
- 50
- Access
- Open access
- OpenAlex
- https://openalex.org/W654901179
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:1808236
Keywords
Scanning tunneling microscope, Molecular beam epitaxy, Materials science, Scanning tunneling spectroscopy, Bilayer
References
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- Integrated circuits based on bilayer MoS₂ transistors.
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- Single-layer MoS2 phototransistors.
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- Optical generation of excitonic valley coherence in monolayer WSe2.
- Electronic structure of two-dimensional transition metal dichalcogenide bilayers from ab initio theory
- Electrical control of neutral and charged excitons in a monolayer semiconductor
- Vertical and in-plane heterostructures from WS2/MoS2 monolayers.
- Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
- Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope
- Dense network of one-dimensional midgap metallic modes in monolayer MoSe2 and their spatial undulations.
- Spatially resolved one-dimensional boundary states in graphene–hexagonal boron nitride planar heterostructures
- Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2
- Atomically thin MoS₂: a new direct-gap semiconductor.
- Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
- Single-layer MoS2 transistors.
- Defect-induced conductivity anisotropy in MoS2monolayers
- Anomalously robust valley polarization and valley coherence in bilayer WS2
Cited by
- Recent Advances in Two-Dimensional Materials beyond Graphene.
- Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
- Periodic Modulation of the Doping Level in Striped MoS₂ Superstructures.
- Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.
- Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x Crystals.
- Narrow‐Gap Quantum Wires Arising from the Edges of Monolayer MoS2 Synthesized on Graphene
- Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
- Evidence for two distinct defect related luminescence features in monolayer MoS2
- Energy gap in tunneling spectroscopy: Effect of the chemical potential shift
- Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution.
- Molecular beam epitaxy growth of atomically ultrathin MoTe2 lateral heterophase homojunctions on graphene substrates
- Centimeter-Scale Nearly Single-Crystal Monolayer MoS2 via Self-Limiting Vapor Deposition Epitaxy
- Angle resolved photoemission spectroscopy reveals spin charge separation in metallic MoSe2 grain boundary
- Broken Symmetry Induced Strong Nonlinear Optical Effects in Spiral WS2 Nanosheets.
- Effect of an external electric field on the electronic properties of SnS2/PbI2 van der Waals heterostructures
- A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy
- Advanced Scanning Probe Microscopy of Graphene and Other 2D Materials
- MoS2 materials synthesized on SiO2/Si substrates via MBE
- Diet And Antibiotic Influences On Mice Induced With Dss Colitis And Their Gut Flora
- Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.
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