Low Temperature Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy Study at the α-Sn/Ge(111) Surface
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- Type
- article
- Published
- 2006-03-27
- Cited by
- 1
- References
- 7
- Access
- Open access
- OpenAlex
- https://openalex.org/W2078095192
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:97658200
Keywords
Scanning tunneling microscope, Scanning tunneling spectroscopy, Spin polarized scanning tunneling microscopy, Quantum tunnelling, Electrochemical scanning tunneling microscope
References
- Metal-semiconductor fluctuation in the Sn adatoms in the Si(111)-Sn and Ge(111)-Sn ( sqrt 3 x sqrt 3)R30 degrees reconstructions.
- Sn/Ge(111) surface charge-density-wave phase transition
- PERIODIC LATTICE DISTORTION ACCOMPANYING THE CHARGE-DENSITY-WAVE TRANSITION FOR SN/GE(111)
- Two-Dimensional Phase Transition Mediated by Extrinsic Defects
- Adsorption of tin on the Ge(111)-c(2 × 8) surface studied with scanning tunneling microscopy and photoelectron spectroscopy
- Direct observation of sn adatoms dynamical fluctuations at the Sn/Ge(111) surface.
- Surface Charge Ordering Transition: α Phase of Sn/Ge(111)
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