Vertical and in-plane heterostructures from WS2/MoS2 monolayers.
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Summary
A one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS2/MoS2 via control of the growth temperature is reported.
- Type
- article
- Published
- 2014-12-01
- Cited by
- 2,096
- References
- 49
- Access
- Open access
- OpenAlex
- https://openalex.org/W1984080703
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:205410476
Keywords
Heterojunction, Monolayer, Stacking, Materials science, Fabrication
References
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- Electrical spin injection in a ferromagnetic semiconductor heterostructure
- Extraordinary room-temperature photoluminescence in triangular WS2 monolayers.
- Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
- Boron nitride substrates for high mobility chemical vapor deposited graphene
- Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide.
- Theoretical study of Schottky-barrier formation at epitaxial rare-earth-metal/semiconductor interfaces
- Large scale growth and characterization of atomic hexagonal boron nitride layers.
- Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.
- Fabrication and Characterization of Graphene/Hexagonal Boron Nitride Hybrid Sheets
- Electronic structure, properties, and phase stability of inorganic crystals: A pseudopotential plane‐wave study
- Atomically thin MoS₂: a new direct-gap semiconductor.
- Band offsets and heterostructures of two-dimensional semiconductors
- Modulating the atomic and electronic structures through alloying and heterostructure of single-layer MoS2
- Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
- Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
- Identification of individual and few layers of WS2 using Raman Spectroscopy
Cited by
- van der Waals epitaxial ultrathin two-dimensional nonlayered semiconductor for highly efficient flexible optoelectronic devices.
- Microscopic basis for the band engineering of Mo1−xWxS2-based heterojunction
- Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family
- Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures.
- Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions.
- Twinned Growth of Metal‐Free, Triazine‐Based Photocatalyst Films as Mixed‐Dimensional (2D/3D) van der Waals Heterostructures
- Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth.
- Gate Tunable Transport in Graphene/MoS2/(Cr/Au) Vertical Field-Effect Transistors
- Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion.
- Tip-enhanced Raman spectroscopy: principles, practice, and applications to nanospectroscopic imaging of 2D materials
- Charge Transfer Excitons at van der Waals Interfaces.
- Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy.
- Effect of WO3 precursor and sulfurization process on WS2 crystals growth by atmospheric pressure CVD
- Synthesis and structure of two-dimensional transition-metal dichalcogenides
- Two-dimensional transition metal dichalcogenides: Clusters, ribbons, sheets and more
- Tuning carrier confinement in the MoS2/WS2 heterostructure
- Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures.
- Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
- Interface Coupling in Twisted Multilayer Graphene by Resonant Raman Spectroscopy of Layer Breathing Modes.
- Drying‐Mediated Self‐Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures
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