Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.
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Summary
Inversion-domain-boundaries are introduced into molecular-beam-epitaxy grown MoSe2 homobilayers, which induce uncommon fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences.
- Type
- article
- Published
- 2017-09-02
- Cited by
- 56
- References
- 47
- Access
- Open access
- OpenAlex
- https://openalex.org/W2751233946
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:206742678
Keywords
Stacking, Condensed matter physics, Materials science, Valence (chemistry), Crystallography
References
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- Higher-accuracy van der Waals density functional
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- Van der Waals density functionals applied to solids
- van der Waals density functional for general geometries.
- Two-dimensional material nanophotonics
- Dense network of one-dimensional midgap metallic modes in monolayer MoSe2 and their spatial undulations.
- Atomically thin MoS₂: a new direct-gap semiconductor.
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Cited by
- Stacking tunable interlayer magnetism in bilayer CrI3
- Hole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment
- Inversion domain boundaries in MoSe2 layers
- The Atomic Circus: Small Electron Beams Spotlight Advanced Materials Down to the Atomic Scale
- Transport and Photoelectric Properties of 2D Silicene/MX2 (M = Mo, W; X = S, Se) Heterostructures
- Mirror twin grain boundaries in molybdenum dichalcogenides
- A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY
- Atomic‐Scale Structural Modification of 2D Materials
- Healing of Planar Defects in 2D Materials via Grain Boundary Sliding
- CalAtom: A software for quantitatively analysing atomic columns in a transmission electron microscope image.
- Atomically Sharp Dual Grain Boundaries in 2D WS2 Bilayers.
- Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling.
- The mechanical properties and strain effect on the electronic properties of III-nitride monolayers: ab-initio study
- Multifarious interfaces, band alignments, and formation asymmetry of WSe2-MoSe2 heterojunction grown by molecular-beam epitaxy.
- A Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer
- Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers
- Polarization‐dependent anisotropic Raman response of CVD‐grown vertically stacked MoS 2 layers
- Quasi one-dimensional van der Waals gold selenide with strong interchain interaction and giant magnetoresistance.
- Selective linear etching of monolayer black phosphorus using electron beams
- Charge Density Modulation and the Luttinger Liquid State in MoSe2 Mirror Twin Boundaries.
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