Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.

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Summary

Inversion-domain-boundaries are introduced into molecular-beam-epitaxy grown MoSe2 homobilayers, which induce uncommon fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences.

Type
article
Published
2017-09-02
Cited by
56
References
47
Access
Open access

Keywords

Stacking, Condensed matter physics, Materials science, Valence (chemistry), Crystallography

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