Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors
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- Type
- article
- Published
- 2018-10-31
- Cited by
- 57
- References
- 156
- OpenAlex
- https://openalex.org/W2899389179
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:139939809
Keywords
Heterojunction, Quantum tunnelling, Materials science, Transistor, Nanowire
References
- Influence of strain and metal thickness on metal-MoS₂ contacts.
- Superlattice structures of graphene-based armchair nanoribbons
- Entanglement entropy from charge statistics: Exact relations for noninteracting many-body systems
- A Novel Barrier Controlled Tunnel FET
- Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
- Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
- Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.
- Dielectric Engineered Tunnel Field-Effect Transistor
- High-Current Gain Two-Dimensional MoS₂-Base Hot-Electron Transistors.
- Simulation of Phosphorene Field-Effect Transistor at the Scaling Limit
- Tunneling Transistors Based on Graphene and 2-D Crystals
- Energy gaps in graphene nanoribbons.
- Vertical and in-plane heterostructures from WS2/MoS2 monolayers.
- Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
- One-Dimensional Electrical Contact to a Two-Dimensional Material
- Molecular bandgap engineering of bottom-up synthesized graphene nanoribbon heterojunctions.
- Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes
- A theory of the electrical breakdown of solid dielectrics
- Energy gaps in zero-dimensional graphene nanoribbons
- Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.
Cited by
- Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe2 Heterostructure
- A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures
- Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities
- Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure
- Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel
- Band-Offset Degradation in van der Waals Heterojunctions
- Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges.
- Using Superlattice Structure in the Source of GNRFET to Improve Its Switching Performance
- Implementing expanded source doping to improve performance of a nano-scale fully depleted silicon on insulator transistor
- Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors
- Low Lattice Mismatch InSe–Se Vertical Van der Waals Heterostructure for High‐performance Transistors via Strong Fermi‐Level Depinning
- Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors
- n‐Type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction
- Improved Drain Current Characteristics of Germanium Source Triple Material Double Gate Hetero-Dielectric Stacked TFET for Low Power Applications
- Normal Strain-Induced Tunneling Behavior Promotion in van der Waals Heterostructures
- Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions
- Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)
- Dangling-to-Interstitial Oxygen Transition and Its Modifications of the Electronic Structure in Few-Layer Phosphorene
- An Ultra-Low-Power Black Phosphorus (B-Ph)/Si Heterojunction Dopingless-Tunnel FET (HD-TFET) with Enhanced Electrical Characteristics
- High-current MoS2 transistors with non-planar gate configuration.
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