Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides
Explore this paper's citation graph
- Type
- article
- Published
- 2018-08-01
- Cited by
- 63
- References
- 50
- OpenAlex
- https://openalex.org/W2800253033
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:103878214
Keywords
Ohmic contact, Schottky barrier, Monolayer, Materials science, Electrode
References
- Two-dimensional molybdenum carbides: potential thermoelectric materials of the MXene family.
- Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors.
- Does p-type ohmic contact exist in WSe2-metal interfaces?
- Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.
- Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
- Generalized Gradient Approximation Made Simple.
- Two-dimensional transition metal carbides.
- Van der Waals density functionals applied to solids
- Graphene-like titanium carbides and nitrides Tin+1Cn, Tin+1Nn (n = 1, 2, and 3) from de-intercalated MAX phases: First-principles probing of their structural, electronic properties and relative stability
- Zeeman-type spin splitting controlled by an electric field
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.
- Two‐Dimensional Nanocrystals Produced by Exfoliation of Ti3AlC2
- Phase engineering of transition metal dichalcogenides.
- Are MXenes promising anode materials for Li ion batteries? Computational studies on electronic properties and Li storage capability of Ti3C2 and Ti3C2X2 (X = F, OH) monolayer.
- Ultimately short ballistic vertical graphene Josephson junctions
- SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS
- Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
- Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.
- High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.
Cited by
- n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces.
- Applications of 2D MXenes in energy conversion and storage systems.
- Interfacial properties of two-dimensional graphene/ZrS2 and ScS2/ZrS2 contacts
- Sub 10 nm Bilayer Bi2O2Se Transistors
- Bonding and electronics of the silicene/MoTe2 interface under strain
- Effects of organic solvents on morphologies, photoluminescence, and photocatalytic properties of ZnO nanostructures
- Giant spin splitting induced by a symmetry-braking van der Waals interaction
- Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors
- Giant Rashba spin splitting induced by heavy element adsorption at germanene
- Pervasive Ohmic contacts of monolayer 4-hT2 graphdiyne transistors
- Performance Limit of Monolayer WSe2 Transistors: Significantly Outperform their MoS2 Counterpart.
- First-principles investigations on MXene-blue phosphorene and MXene-MoS2 transistors
- Carrier conduction mechanisms of WSe2/p-type Ge epilayer heterojunction depending on the measurement temperature and applied bias
- Design of MXene contacts for high-performance WS2 transistors
- Modulation in structural and electronic properties of 2D Ga2O3 by chemical passivation
- Surface functional group modification induced partial Fermi level pinning and ohmic contact at borophene-MoS2 interfaces.
- Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain.
- Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors
- Physics of electron emission and injection in two‐dimensional materials: Theory and simulation
- Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Related papers
- WSe2/Pd Schottky diode combining van der Waals integrated and evaporated metal contacts
- Back‐to‐back connected asymmetric Schottky diodes with series resistance as a single diode
- Ohmic contacts to moderately doped semiconductors—are they really Ohmic or low-barrier Schottky contacts?
- Electric Field Induced Schottky to Ohmic Contact Transition in Fe3GeTe2/TMDs Contacts
- Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)
- Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctions
- Rectified Schottky diodes based on PEDOT:PSS/InGaZnO junctions
- Silicon carbide Schottky and ohmic contact process dependence