Silicon carbide Schottky and ohmic contact process dependence
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- Type
- article
- Published
- 2002-03-01
- Cited by
- 14
- References
- 5
- OpenAlex
- https://openalex.org/W2003109201
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:136675996
Keywords
Ohmic contact, Schottky diode, Schottky barrier, Annealing (glass), Metal–semiconductor junction
References
- Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
- High performance of high-voltage 4H-SiC Schottky barrier diodes
- Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts
- High voltage 4H-SiC Schottky barrier diodes
- Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques
Cited by
- Fabrication, electrical characterization, and annealing of Al/, Cu/, and Au/4H-SiC Schottky diodes
- Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
- Wide gap semiconductor microwave devices
- Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H–SiC
- Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model
- Enhanced defects recombination in ion irradiated SiC
- Formation and Interface Analysis of Ti ∕ Ni ∕ Ti ∕ Au Ohmic Contacts on n -Type 6H–SiC
- Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum
- Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC
- Band line-up at the 4H-SiC/Ni interface determined with photoemission spectroscopy
- Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers
- The role of interface effects and minority carriers in the metal-semiconductor Schottky junction
- Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions
- Materials and Processes for Schottky Contacts on Silicon Carbide
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