Rectified Schottky diodes based on PEDOT:PSS/InGaZnO junctions
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- Type
- article
- Published
- 2017-09-01
- Cited by
- 18
- References
- 22
- OpenAlex
- https://openalex.org/W2614156624
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:99995703
Keywords
Schottky diode, PEDOT:PSS, Schottky barrier, Optoelectronics, Rectification
References
- Enhancing light out-coupling of organic light-emitting devices using indium tin oxide-free low-index transparent electrodes
- ITO-on-top organic light-emitting devices: a correlated study of opto-electronic and structural characteristics
- Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
- Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O
- High‐Conductivity Poly(3,4‐ethylenedioxythiophene):Poly(styrene sulfonate) Film and Its Application in Polymer Optoelectronic Devices
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts
- Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
- Fabrication and characterization of NiO/ZnO p–n junctions by pulsed laser deposition
- High-frequency polymer diode rectifiers for flexible wireless power-transmission sheets
- Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes
- Highly Conductive Polymer Anodes as Replacements for Inorganic Materials in High‐Efficiency Organic Light‐Emitting Diodes
- Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors
- Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature
- Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides
- Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer
- Gigahertz Operation of a-IGZO Schottky Diodes
- Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 ^°C on a Flexible Substrate
- Polymer Photovoltaic Cells with Conducting Polymer Anodes
- Pentacene‐Zinc Oxide Vertical Diode with Compatible Grains and 15‐MHz Rectification
Cited by
- High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO
- ZnON MIS Thin-Film Diodes
- Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctions
- Electrical and Photoresponse Properties of Al/p-Si/Y1-xSrxMnO3/Al Heterojunction Photodiodes
- On the charge transport mechanism of cross-linked PEDOT:PSS films
- Flexible PEDOT:PSS/ZnO Schottky diodes on polyimide substrates
- Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates
- Schottky barrier diodes fabricated with metal oxides AgOx/IGZO
- Investigation of electrical and admittance analysis of Au/Thiophene/n-Si structure at room temperature
- UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes
- Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.
- Printed Four Key‐Device Units for Unified Platform of Wireless Anti‐Counterfeiting Label to Bridge in Blockchain
- Single-step treatment to improve conductivity of PEDOT:PSS by hydrobromic acid solution for application of transparent electrode
- Advances in Flexible Non-volatile Resistive Switching Memory Based on Organic Poly (3, 4-ethylenedioxythio phene): poly (styrenesulfonate) Film
- Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces
- Solvent free spray coated n type PEDOT PSS thin film for high performance homojunction diode
- Impact of the anode contact material in the current–voltage characteristics of PEDOT:PSS/ZnO heterojunction diodes
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