Compound States Profile and Thickness of Ultra-thin Silicon Dioxide Film
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- Type
- article
- Published
- 2012-01-01
- Cited by
- 0
- References
- 14
- OpenAlex
- https://openalex.org/W2351892592
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:100796128
Keywords
Silicon, Materials science, Silicon dioxide, Wafer, Thermal oxidation
References
- Microscopic mechanism of thermal silicon oxide growth
- Characterization of SiO2/Si interfaces by using X-ray photoelectron spectroscopy time-dependent measurement
- Origin of unusual rapid oxidation process for ultrathin oxidation (<2 nm) of silicon
- Properties of oxidized silicon as determined by angular-dependent X-ray photoelectron spectroscopy
- Ultrathin SiO2 on Si IV. Intensity measurement in XPS and deduced thickness linearity
- Reliability improvement of rapid thermal oxide using gas switching
- Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si
- Studies on fabrication and characterization of a ZnO/p-Si-based solar cell
- Carrier transport in high-efficiency ZnO/SiO2/Si solar cells
- XPS studies of SiO2/Si system under external bias
- Photoemission-based photovoltage probe of semiconductor surface and interface electronic structure.
- The role of extra-atomic relaxation in determining Si 2p binding energy shifts at silicon/silicon oxide interfaces
- Formation of ultrathin silicon oxides—modeling and technological constraints
- Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime
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