Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.
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Summary
In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
- Type
- article
- Published
- 2010-02-01
- Cited by
- 1,973
- References
- 37
- OpenAlex
- https://openalex.org/W2118980095
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:5443552
Keywords
Materials science, Conductivity, Oxide, Nanotechnology, Transmission electron microscopy
References
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- Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
- Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
- Identification of a determining parameter for resistive switching of TiO2 thin films
- Reproducible resistance switching in polycrystalline NiO films
- Electrical conductance of crystalline TinO2n-1 for n=4-9
- Metal-insulator transitions in Ti 4 O 7 single crystals: Crystal characterization, specific heat, and electron paramagnetic resonance
- Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
- Nanoionics-based resistive switching memories.
- Resistive switching in transition metal oxides
- Crystallographic shear in the higher titanium oxides: Structure, texture, mechanisms and thermodynamics
- Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Cited by
- High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
- A ferroelectric memristor.
- Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
- Insights into How Fluorine-Adsorption and n-Type Doping Affect the Relative Stability of the (001) and (101) Surfaces of TiO2: Enhancing the Exposure of More Active but Thermodynamically Less Stable (001).
- Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode
- Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures
- Sensory gating in bilayer amorphous carbon memristors.
- Probing Li-ion Dynamics and Reactivity on the Nanoscale
- Concurrent resistive and capacitive switching of nanoscale TiO2 memristors
- Al/CuxO/Cu memristive devices : fabrication, characterization, and modeling
- Current Conduction Mechanism of Nitrogen-Doped AlO_x RRAM
- Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays
- Modeling, Fabrication, and Characterization of Memristors
- Investigation of electroforming characteristics of TiO2 based resistance switching devices
- The Materials Science of Titanium Dioxide Memristors
- Experimental and Simulation Study of Resistive Switches for Memory Applications
- Resistive switching and impedance spectroscopy in SiOx-based metal-oxide-metal trilayers down to helium temperatures
- Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
- Leakage current and resistive switching mechanisms in SrTiO3
- The effect of annealing temperature on resistive switching behaviors of HfOx film
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