The effect of annealing temperature on resistive switching behaviors of HfOx film
Explore this paper's citation graph
- Type
- article
- Published
- 2015-06-05
- Cited by
- 13
- References
- 21
- OpenAlex
- https://openalex.org/W585133869
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:135674922
Keywords
Annealing (glass), Materials science, Atmospheric temperature range, Space charge, Optoelectronics
References
- Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching
- Effect of Ni3+ concentration on the resistive switching behaviors of NiO memory devices
- Hafnium and zirconium silicates for advanced gate dielectrics
- Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film
- Memristive switching mechanism for metal/oxide/metal nanodevices.
- Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si(100)
- XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA
- Resistive switching characteristics of ZnO based ReRAMs with different annealing temperatures
- The Poole-Frenkel effect with compensation present.
- White-light-controlled resistive switching and photovoltaic effects in TiO2/ZnO composite nanorods array at room temperature
- Reactions of Zr thin films with SiO2 substrates
- Bonding and XPS chemical shifts in ZrSiO 4 versus SiO 2 and ZrO 2 : Charge transfer and electrostatic effects
- Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.
- Filament observation in metal-oxide resistive switching devices
- Resistance switching of copper doped MoOx films for nonvolatile memory applications
- Co nanoparticles induced resistive switching and magnetism for the electrochemically deposited polypyrrole composite films.
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.
- Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films
- Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance
- HfO_x Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
Cited by
- Al2O3–Cu2O composite charge-trapping nonvolatile memory
- Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices
- Insertion of a pentacene layer into the gold/poly(methyl methacrylate)/heavily doped p-type Si/indium device leading to the modulation of resistive switching characteristics
- Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO 2-x thin films for nonvolatile resistive memory
- Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method
- Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices
- Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)
- Resistive switching properties and conduction mechanisms of LaSmOx thin film by RF sputtering for RRAM applications
- Resistive Switching Properties of Amorphous Sm2Ti2O7 Thin Film Prepared by RF Sputtering for RRAM Applications
- Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures
- Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors
- Tailoring resistive switching in pulsed laser ablated forming-free hafnia thin films based RRAM devices via digital SET and gradual RESET
- Enhanced Resistive Switching Performance of Hafnium Oxide-Based Devices: Effects of Growth and Annealing Temperatures
Related papers
- Change in Structure of 60/40 Brass due to Cold-rolling and Annealing
- Bulk and near-surface annealing behavior of the 0.8 eV luminescence in semi-insulating gallium arsenide
- Impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO2 followed by POCl3 annealing
- Effects of annealing on structure of GaAs(001) nanoindentations
- Effect of annealing temperature on construction of CuO layer on electrodeposited-Cu2O layer by annealing
- Dehydroxylation and formation of KU-1 silica glass surface defects during annealing
- Study on the influence of thermal treatments on the radio-luminescence in LiF:Mg,Cu,P (GR-200A)
- Factors of hetero space charge generation in XLPE under dc electric field of 20 kV/mm
- Annealing of ion-implanted GaN
- Space charge and dielectric breakdown in polypropylene