Nanoionics-based resistive switching memories.
Explore this paper's citation graph
Summary
A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
- Type
- article
- Published
- 2007-11-01
- Cited by
- 4,710
- References
- 80
- OpenAlex
- https://openalex.org/W2045197688
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:45361688
Keywords
Materials science, Resistive random-access memory, Dram, Nanotechnology, Redox
References
- Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
- Current switching of resistive states in magnetoresistive manganites
- Introducing Molecular Electronics
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
- On the origin of bistable resistive switching in metal organic charge transfer complex memory cells
- Gate-controlled atomic quantum switch.
- Nanoionics: ion transport and electrochemical storage in confined systems
- Conductance of redox-active single molecular junctions: an electrochemical approach
- Theoretical current-voltage characteristics of ferroelectric tunnel junctions
- Spatially extended nature of resistive switching in perovskite oxide thin films
- Research directions and challenges in nanoelectronics
- Effect of Ion Diffusion on Switching Voltage of Solid-Electrolyte Nanometer Switch
- Filamentary switching and memory action in thin anodic oxides
- Electroforming and Switching in Oxides of Transition Metals: The Role of Metal-Insulator Transition in the Switching Mechanism
- The detection of current filaments in VO2 thin-film switches using the scanning electron microscope
- Electrical current distribution across a metal–insulator–metal structure during bistable switching
- Programmable polymer thin film and non-volatile memory device
- Large conductance switching and memory effects in organic molecules for data-storage applications
- Nanoelectronics from the bottom up.
- A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
Cited by
- High density crossbar structure for memory application
- Nonlinear transport properties and Joule heating effect in charge ordered LuFe2O4
- Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3
- High‐Performance and Low‐Power Rewritable SiOx 1 kbit One Diode–One Resistor Crossbar Memory Array
- Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
- Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO
- A learnable parallel processing architecture towards unity of memory and computing
- Crossbar Nanoscale HfO2-Based Electronic Synapses
- Softening gold for elastronics.
- Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films.
- Rapid Response High Temperature Oxygen Sensor Based on Titanium Doped Gallium Oxide
- Realistic limits to computation
- Contribution à la conception d'architecture de calcul auto-adaptative intégrant des nanocomposants neuromorphiques et applications potentielles. (Adaptive Computing Architectures Based on Nano-fabricated Components)
- Fast electronic resistance switching involving hidden charge density wave states
- Al/CuxO/Cu memristive devices : fabrication, characterization, and modeling
- Nanogap device: Fabrication and applications
- Trends in Storage Technologies
- Memristors and Superconducting Quantum Interference Filters in RF Systems
- Resistive switching of tin dioxide (SnO2) for memristor applications
- Bi-stable resistive switching in an array of Cu/Cu_xO/AuCu/CuxO/Au nanowires
Related papers
- A Novel Approach to Use ZnO Thin Film as a Switching in Dynamic Random Access Memory (DRAM) Cell
- Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory
- Three-state dynamic random-access memory (DRAM)
- Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
- Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM
- Current status of resistive nonvolatile memories
- Influence of Etch Profiles on the Leakage Current and Capacitance of 3-D DRAM Storage Capacitors
- Editors' Choice—Vertically Integrated Nanowire-Based Zero-Capacitor Dynamic Random Access Memory
- A new soft error mechanism of dynamic memory with grounded cell plate
- MAIN PRINCIPLES OF DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND ANALYSIS OF DRAM MARKET