Semiconductor Material and Device Characterization

Keywords

Equivalent series resistance, Schottky diode, Optoelectronics, Schottky barrier, Diode

References

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• The Kinetics and Mechanism of Formation of Anode Films on Single‐Crystal InSbJ. F. Dewald — 1957
• Contactless resistivity meter for semiconductorsJ.C. Brice, P. Moore — 1961
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• Contactless Measurement of Resistivity of Slices of Semiconductor MaterialsNobuo Miyamoto, Jun‐ichi Nishizawa — 1967
• Ion implant monitoring with thermal wave technologyWilliam L. Smith, Allan Rosencwaig, D. L. Willenborg — 1985
• Automated system for the characterization of high resistivity semiconductors by the van der Pauw methodL. Forbes, J. Tillinghast, Bill Hughes — 1981
• Measurement of High Resistivity Semiconductors Using the van der Pauw MethodP. M. Hemenger — 1973
• Four‐Point Probe Correction Factors for Use in Measuring Large Diameter Doped Semiconductor WafersDavid S. Perloff — 1976
• Geometrical Correction Factor for Semiconductor Resistivity Measurements by Four-Point Probe MethodMasato Yamashita, Masahiro Agu — 1984
• Probe penetration in spreading resistance measurementsWilfried Vandervorst, H.E. Maes — 1984
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• Spreading resistance calculations by the use of Gauss-Laguerre quadratureS.C. Choo, M.S. Leong, HuiQi Hong — 1978
• Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic strippingR. Galloni, Angela Sardo — 1983
• Relationship between the correction factor of the four-point probe value and the selection of potential and current electrodesR. Rymaszewski — 1969
• The use of four-point probe sheet resistance measurements for characterizing low dose ion implantationAlan K. Smith, David S. Perloff, Robert A. Edwards — 1985
• An Efficient Integration Technique for Use in the Multilayer Analysis of Spreading Resistance ProfilesH. L. Berkowitz, R. A. Lux — 1981

Cited by

• Electrical characterization and modeling of low dimensional nanostructure FETJae Woo Lee — 2011
• Optoelectronic properties of resonant tunnelling diodesJosé Maria Longras Figueiredo — 2000
• Crystal Growth, Characterization and Fabrication of CdZnTe-based Nuclear DetectorsRamesh M. Krishna — 2013
• Novel Design Solutions for High Reliability RF MEMS SwitchesFrancesco Solazzi — 2011
• Epitaxial growth of icosahedral boron arsenide on silicon carbide substrates: improved process conditions and electrical propertiesYi Zhang — 2011
• Stress Testing on Silicon Carbide Electronic Devices for Prognostics and Health ManagementRobert Kaplar, Reinhard Brock, Matthew Marinella — 2011
• Improved Induced Diode Photodetectors by Increased Fixed Charge in PECVD Amorphous Silicon NitrideM. Bazilchuk — 2014
• Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 filmsChoelhwyi Bae, C. Krug, G. Lucovsky — 2004
• Structuring materials with nanosecond laser pulses.Sami T. Hendow, Sami A. Shakir — 2010
• Analysis of a-SiNx:H Passivated Si Surfaces Based on Injection Level Dependent Lifetime and Capacitance/Conductance-Voltage MeasurementsH. Haug, Susanne Helland, Ø. Nordseth — 2011
• Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphideAndrew J. Guswa, A. L. Rhodes — 2014
• Nanolink-based thermal devices: integration of ALD TiN thin filmsA.W. Groenland — 2011
• Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition.Etelvino Vázquez — 2016
• Green Energy and TechnologyH. Machrafi — 2012
• Ultrahigh Carrier Mobility Achieved in Photoresponsive Hybrid Perovskite Films via Coupling with Single‐Walled Carbon Nanotubesのり 川津 — 2017
• n-Type Rear Junction Solar Cells with Locally Contacted Al-Alloyed EmitterJohannes Nils Raabe — 2012
• A variable probe pitch micro-Hall effect method義憲 宮崎, 清有 遊佐, 周造 片尾 — 2018
• Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?Eduardo Ventimiglia Xavier — 2018
• Laser oxidized Sn/In films for microlithography applicationsJun Perig — 2006
• 4H-SiC Integrated circuits for high temperature and harsh environment applicationsMihaela Alexandru — 2013

Related papers

• Physics of Semiconductor Devices: Sze/PhysicsSimon M. Sze, Kwok K. Ng — 2006
• Electron-Hole Recombination in GermaniumR. N. Hall — 1952
• The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance techniqueE. H. Nicollian, A. Goetzberger — 1967
• Deep‐level transient spectroscopy: A new method to characterize traps in semiconductorsD. V. Lang — 1974
• Electric Field Effect in Atomically Thin Carbon FilmsKostya S. Novoselov, A. K. Geǐm, С. В. Морозов — 2004
• Statistics of the Recombinations of Holes and ElectronsW. Shockley, W. T. Read — 1952
• Electron transport at metal-semiconductor interfaces: General theory.R. T. Tung — 1992