Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Keywords

Materials science, Nanotechnology, Mechanism (biology), Scaling, Valence (chemistry)

References

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• The Role of CuAlO Interface Layer for Switching Behavior of Al/ Cu_xO/Cu Memory DeviceHangbing Lv, Ting-Ao Tang — 2010
• Thermally stable AgI quantum-dot-based room-temperature fast ionic conductors.義一 西門 — 2011
• High precision tuning of state for memristive devices by adaptable variation-tolerant algorithmSiavash Ali Madadi Jani — 2011
• High‐Performance and Low‐Power Rewritable SiOx 1 kbit One Diode–One Resistor Crossbar Memory Array应厚田 — 2013
• Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devicesDeshun Hong, Y. S. Chen, Ying Li — 2014
• A learnable parallel processing architecture towards unity of memory and computingHaitong Li, Bin Gao, Zheng Chen — 2015
• Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics.André Stoll — 2018
• Current channeling along extended defects during electroreduction of SrTiO3Christian Rodenbücher, Stephan Menzel, Dominik Wrana — 2019
• Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films.Robert J. Pekkanen — 2019
• Memristive Properties of Thin Film Cuprous OxideBrett C. Castle — 2012
• Realistic limits to computationG. F. Cerofolini — 2012
• SOLUTION-PROCESSED INORGANIC ELECTRONICSTeymur Bakhishev — 2011
• Accelerated Publication: Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processesJanice H. Nickel, John Paul Strachan, Matthew D. Pickett — 2013
• Investigations of Conduction Mechanisms of Ion-Conducting, Bridging Memory Devices (CBRAM/PMC/ECM)Kyle Bradley Campbell — 2012
• Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arraysJ.W. Dutli, Geoffrey Taylor — 2014
• Electrical Switching Studies of Chalcogenide-Based Ion-Conducting Variable Resistance DevicesBeth Cook — 2011
• Investigation of electroforming characteristics of TiO2 based resistance switching devicesM. Noman — 2013
• HfO_x/TiO_x/HfO_x/ TiO_x Multilayer-Based Forming-Free RRAM Devices With Excellent UniformityZ. Fang, H.Y. Yu, X. Li — 2011
• Transition metal oxide based resistive RAM for high density non-vilatile memoryX. A. Tran — 2013
• Electrical Characterization of Spherical Copper Oxide Memristive Array SensorsJ. Orta — 2014

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