Resistive Random Access Memory (ReRAM) Based on Metal Oxides
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- Type
- article
- Published
- 2010-10-21
- Cited by
- 944
- References
- 88
- OpenAlex
- https://openalex.org/W2033811947
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:10082831
Keywords
Resistive random-access memory, Non-volatile memory, Random access, CMOS, Memristor
References
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- Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)
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- Structure Effects on Resistive Switching of Al/TiO_x/Al Devices for RRAM Applications
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- Nanoscale chemical state analysis of resistance random access memory device reacting with Ti
- I and i
- Field and polarity dependence of time-to-resistance increase in Fe–O films studied by constant voltage stress method
- A Comprehensive Study of the Resistive Switching Mechanism in Al/TiO_x/TiO_2/Al-Structured RRAM
- Transparent flexible resistive random access memory fabricated at room temperature
- Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory
- Giant and Stable Conductivity Switching Behaviors in ZrO2 Films Deposited by Pulsed Laser Depositions
- In situ observation of oxygen gettering by titanium overlayer on HfO2∕SiO2∕Si using high-resolution Rutherford backscattering spectroscopy
- Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes
- Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
- Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
- Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
- Study on the dynamic resistance switching properties of NiO thin films
- Development of a thermal diffusivity measurement system for metal thin films using a picosecond thermoreflectance technique
- Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides
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- High Performance Computing: 6th Latin American Conference, CARLA 2019, Turrialba, Costa Rica, September 25–27, 2019, Revised Selected Papers
- Novel Technologies for Next Generation Memory
- A selector device based on graphene–oxide heterostructures for memristor crossbar applications
- Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
- Study of mn doped hfo2 based synaptic devices for neuromorphic applications
- Endurance Enhancement and High Speed Set/Reset of 50 nm Generation HfO2 Based Resistive Random Access Memory Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme
- Conductive filament structure in HfO2 resistive switching memory devices
- Suppression of switching voltage variation by controlling filament formation in In/porous alumina/Al resistive change random access memory
- A Study of the Memristor Models and Applications
- Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress
- Studying the Impact of Multicore Processor Scaling on Cache Coherence Directories via Reuse Distance Analysis
- Applications des technologies mémoires MRAM appliquées aux processeurs embarqués
- Dielectric Surface Currents and Dielectric Constant Measurements of Pure and Multi-walled Carbon Nanotubes (MWCNT) Doped Polyvinyl Alcohol Thin Films
- Temperature dependence of resistance of conductive nanofilament formed in Ni/NiOx/Pt resistive switching random access memory
- 3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines
- Implementation of Si nanocrystals in non‐volatile memory devices
- Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process
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