Resistive switching in a Pt/TiO2/Pt thin film stack -- a candidate for a non-volatile ReRAM
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- Type
- article
- Published
- 2007-09-01
- Cited by
- 91
- References
- 7
- OpenAlex
- https://openalex.org/W1964895102
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:135985098
Keywords
Electroforming, Resistive random-access memory, Stack (abstract data type), Materials science, Current (fluid)
References
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
- Switching phenomena in titanium oxide thin films
- Impedance spectroscopy of TiO2 thin films showing resistive switching
- Electrical current distribution across a metal–insulator–metal structure during bistable switching
- Resistive switching in metal–ferroelectric–metal junctions
- Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
- Reproducible switching effect in thin oxide films for memory applications
Cited by
- Resistive-switching behavior in polycrystalline CaCu(3)Ti(4)O(12) nanorods.
- Transition metal oxide based resistive RAM for high density non-vilatile memory
- Formação de filmes finos de Al2O3 por anodização e seu uso em dispositivos com filmes de Poli(3-Hexiltiofeno)
- Resistive Switching in Au/TiO2/Pt Thin Film Structures
- Joule heating effect in nonpolar and bipolar resistive random access memory
- Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits
- Field-Induced Point Defect Redistribution in Metal Oxides: Mesoscopic Length Scale Phenomena
- Resistive switching phenomena: A review of statistical physics approaches
- Low temperature Au induced crystallization of titanium dioxide thin films for resistive switching applications
- Thermographic analysis of localized conductive channels in bipolar resistive switching devices
- Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel 1×1 crossbar array resistive random access memory cells
- Emerging memories: resistive switching mechanisms and current status
- Resistive switching behavior of sol–gel deposited TiO2 thin films under different heating ambience
- Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors
- Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film
- Bipolar resistive switching in oxides: mechanisms and scaling
- Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film
- Study of anti-clockwise bipolar resistive switching in Ag/NiO/ITO heterojunction assembly
- Resistive switching in Au/TiO2/Pt thin film structures on silicon
- Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
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