Optoelectrical properties of electrodeposited CdxHg1−xTe with a bandgap energy of 1.35 eV

Keywords

Band gap, Schottky diode, Acceptor, Materials science, Photocurrent

References

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• Cyclotron Resonance and Hot Electron Effects in II–VI SemiconductorsBertrand Meyer, D.M. Hofmann — 1997
• Deposition and characterization of CdxHg1−xTe films electroplated from a nonaqueous bathJaya P. Nair, R. Jayakrishnan, Nandu B. Chaure — 1999
• Photo‐Induced Current Transient Spectroscopy (PICTS) of Deep Levels in Electrodeposited CdTe FilmsA. E. Rakhshani — 1998
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• Mercury Cadmium Telluride Photodiodes at the Beginning of the Next Millennium (Review Paper)Antoni Rogalski — 2001
• Heterojunction properties of electrodeposited CdTe/CdS solar cellsA. E. Rakhshani — 2001
• Photoelectrochemical Properties of Semiconducting Cadmium Mercury Telluride Thin Films with Bandgaps Between 1.47 and 1.08 eVM. Neumann‐Spallart, GovindaSamy TamizhMani, Claude Lévy‐Clément — 1990
• Detailed Study of Bandgap Energy Levels in CdTe Films Electrodeposited from Chlorine‐Containing SolutionsA. E. Rakhshani, Y. Makdisi — 2000

Cited by

• Potential of using the Cd0.8Hg0.2Te alloy in solar cellsL. A. Kosyachenko, V. V. Kulchinsky, S. Yu. Paranchych — 2007
• Charge transport generation-recombination mechanism in Au/N-CdZnTe diodesL. A. Kosyachenko — 2004
• Studies of HG(1-x)CDxTe (MCT) formation by electrochemical atomic layer deposition (ALD), and investigations into bandgap engineeringVenkatram Venkatasamy, N. Jayaraju, Stephen M. Cox — 2007
• Photovoltaics literature survey (no. 20)Bryce S. Richards — 2003
• Structural, optical and electrical characterization of HgxCd1‐xTe polycrystalline films fabricated by two‐source evaporation techniqueM. Basharat, Mohammed A. Hannan, Nazar Abbas Shah — 2007

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