Potential of using the Cd0.8Hg0.2Te alloy in solar cells
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- Type
- article
- Published
- 2007-01-01
- Cited by
- 2
- References
- 20
- OpenAlex
- https://openalex.org/W29382055
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:92671554
Keywords
Diode, Photoelectric effect, Materials science, Optoelectronics, Quantum efficiency
References
- Anodic fluoride on HgMnTe
- Fundamentals of solar cells
- Optical Constants of In1-xGaxSb Ternary Alloys: Experiment and Modeling
- Thermal Coated Extendible Boom for Space Environment
- Reversible conductivity changes in discharge‐produced amorphous Si
- Photovoltaic spectra of HgCdTe diodes fabricated by ion beam milling
- Surface-barrier p-CdTe-based photodiodes
- Charge transport generation-recombination mechanism in Au/N-CdZnTe diodes
- A Voltammetric Study of Compound Formation in the Hg‐Cd‐Te System
- THEORETICAL ANALYSIS OF THE QUANTUM PHOTOELECTRIC YIELD IN SCHOTTKY DIODES
- Energy gap versus alloy composition and temperature in Hg1−xCdxTe
- Electrodeposited Films of CdxHg1—xTe with Bandgap Energy in the Range 1.2–1.5 eV
- Ion beam milling effect on electrical properties of Hg1−xCdxTe
- The physics of semiconductor devices
- Optoelectrical properties of electrodeposited CdxHg1−xTe with a bandgap energy of 1.35 eV
- Modification of Mercury Cadmium Telluride, Mercury Manganese Tellurium, and Mercury Zinc Telluride by Ion Etching
- Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
- Deep p-n junction in Hg1-xCdxTe created by ion milling
- Studies of CdHgTe as a material for x- and g-ray detectors
- Semiconductor Physics
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