Reversible Electrical Switching Phenomena in Disordered Structures

Keywords

Materials science, Thermal conduction, Electrical conductor, Electric field, Condensed matter physics

References

• The Capture of Hot Electrons by Gold Centres in n-type GermaniumRob Pratt, B. K. Ridley — 1963
• Vorprozesse des Wärmedurchschlages. II. Zur Theorie der inhomogenen Stromverteilung bei hohen elektrischen LeistungenKarl W. Böer, E. Jähne, E. Nebauer — 1961
• Electric Field Effects in Trapping ProcessesG. A. Dussel, Richard H. Bube — 1966
• Electrons in disordered structuresN. F. Mott — 2001
• Electrons in disordered structuresN. F. Mott — 1967

Cited by

• Materials science: Changing face of the chameleonEmilio Pedrinaci Rodríguez — 2005
• Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical EvidencesKathleen Kennedy Manzo — 2016
• A High‐On/Off‐Ratio Floating‐Gate Memristor Array on a Flexible Substrate via CVD‐Grown Large‐Area 2D Layer StackingJosé María García Blanco — 2017
• Distortion of Local Atomic Structures in Amorphous Ge-Sb-Te Phase Change Materials.Catarina Viegas, Tânia Dinis — 2018
• Si2Sb2Te6 Phase Change Material for Low-Power Phase Change Memory ApplicationXilin Zhou, Liangcai Wu, Zhitang Song — 2009
• Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structuresYoung‐Kuk Kim, S. A. Park, Ju Heyuck Baeck — 2006
• High-Temperature Electrical Characterization of Ge 2 Sb 2 Te 5 Phase Change Memory DevicesFaruk Dirisağlık — 2014
• Realistic limits to computationG. F. Cerofolini — 2012
• Material Engineering for Phase Change MemoryDavid Cabrera — 2014
• Electronic properties of glassy As 2 Te 3Ann Rose Abraham, A. Hrubý, L. Štourač — 1972
• A Study of Some Thermophysical Parameters in Glassy Se_80Te_20Se80Te20 and Se_80Te_10M_10Se80Te10M10 (Cd, In, and Sb) AlloysN. Chandel, N. Mehta — 2013
• Electrical properties of amorphous Se70Ge30−xMx system, where M represents silver, cadmium or leadM.A. Afifi, M. Fadel, E.G. El-Metwally — 2005
• A Reliability Prediction Method for Phase-Change Devices Using Optimized Pulse ConditionsMartin Jared Barclay — 2014
• Electrical transport and switching in phase change materialsDaniel Krebs, Matthias Wuttig — 2010
• Electronic transport in amorphous phase-change materialsJennifer Luckas — 2012
• Advances in Neuromorphic Memristor Science and ApplicationsRóbert Kozma — 2012
• Switching phenomenon in a Se 70 Te 30– x Cd x filmsM.A. Afifi, A.E. Bekheet, N.A. Hegab — 2007
• New sulphide glasses in the ZrS2-K2S-GeS2 systemJong Heo, Atsushi Sugitani, J. D. Mackenzie — 1990
• Chalcogenide glasses as prospective materials for optical memories and optical data storageAlexander V. Kolobov, Junji Tominaga — 2003
• ELECTRICAL SWITCHING PROPERTIES OF TERNARY AND LAYERED CHALCOGENIDE PHASE-CHANGE MEMORY DEVICESMartin Jared Barclay — 2009

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