A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.
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Summary
This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
- Type
- article
- Published
- 2011-08-01
- Cited by
- 2,091
- References
- 28
- OpenAlex
- https://openalex.org/W2036899386
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:7984410
Keywords
Commutation, Crossbar switch, Non-volatile memory, Computer science, Transistor
References
- Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
- MOCVD Ge_3Sb_2Te_5 for PCM Applications
- High switching endurance in TaOx memristive devices
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- A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
- Direct observation of oxygen movement during resistance switching in NiO/Pt film
- Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
- Memristive switching mechanism for metal/oxide/metal nanodevices.
- Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
- Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
- Ferroelectric thin films: Review of materials, properties, and applications
- Carbon nanotube-based nonvolatile random access memory for molecular computing
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- Reproducible resistance switching in polycrystalline NiO films
- Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices
- A polymer/semiconductor write-once read-many-times memory
- TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
- Complementary resistive switches for passive nanocrossbar memories.
Cited by
- High density crossbar structure for memory application
- High‐Performance and Low‐Power Rewritable SiOx 1 kbit One Diode–One Resistor Crossbar Memory Array
- A learnable parallel processing architecture towards unity of memory and computing
- A search for the ground state structure and the phase stability of tantalum pentoxide
- Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films.
- Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device.
- Concurrent resistive and capacitive switching of nanoscale TiO2 memristors
- Accelerated Publication: Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processes
- Investigation of electroforming characteristics of TiO2 based resistance switching devices
- Emerging run-time reconfigurable FPGA and CAD tools
- Experimental and Simulation Study of Resistive Switches for Memory Applications
- A selector device based on graphene–oxide heterostructures for memristor crossbar applications
- Data Clustering using Memristor Networks
- Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform
- A mathematical framework for the analysis and modelling of memristor nanodevices
- Highly Efficient Labeling of Human Lung Cancer Cells Using Cationic Poly-l-lysine-Assisted Magnetic Iron Oxide Nanoparticles
- Applications des technologies mémoires MRAM appliquées aux processeurs embarqués
- Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring
- Numerical study of read scheme in one-selector one-resistor crossbar array
- Three-Dimensional Networked Nanoporous Ta2O(5-x) Memory System for Ultrahigh Density Storage.
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