MOCVD Ge_3Sb_2Te_5 for PCM Applications
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- Type
- article
- Published
- 2010-07-19
- Cited by
- 15
- References
- 11
- OpenAlex
- https://openalex.org/W1970486000
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:23016938
Keywords
Metalorganic vapour phase epitaxy, Phase-change memory, Materials science, Alloy, Optoelectronics
References
- Cyclic PECVD of Ge2Sb2Te5 Films Using Metallorganic Sources
- Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications
- CVD of Amorphous GeTe Thin Films
- Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and selenium.
- A unified 7.5nm dash-type confined cell for high performance PRAM device
- Chalcogenide PCM: a memory technology for next decade
- Phase change memory technology
- Highly Scalable Phase Change Memory with CVD GeSbTe for Sub 50nm Generation
- Recent Advances in High Density Phase Change Memory (PRAM)
- Current status of the phase change memory and its future
- A Novel Cell Technology for Phase Change RAM
Cited by
- Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
- Metal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)
- Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
- Phase change materials in non-volatile storage
- Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.
- A self-aligned process for phase-change material nanowire confined within metal electrode nanogap
- Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching
- Amorphous thin GeSbTe phase-change films prepared by radical-assisted metal-organic chemical vapor deposition
- Plasma Enhanced Chemical Vapor Deposition of Conformal GeTe Layer for Phase Change Memory Applications
- MOCVD GST for high speed and low current Phase Change Memory
- Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe
- Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application.
- An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects
- Microscopic mechanism of carbon-dopant manipulating device performance in CGeSbTe-based phase change random access memory.
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