A selector device based on graphene–oxide heterostructures for memristor crossbar applications
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- Type
- article
- Published
- 2015-05-13
- Cited by
- 16
- References
- 33
- OpenAlex
- https://openalex.org/W345625829
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:92605460
Keywords
Crossbar switch, Memristor, Graphene, Heterojunction, Oxide
References
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- Observation of two resistance switching modes in TiO2 memristive devices electroformed at low current
- Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory
- Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.
- Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element
- High switching endurance in TaOx memristive devices
- Collective Motion of Conducting Filaments in Pt/n‐Type TiO2/p‐Type NiO/Pt Stacked Resistance Switching Memory
- Ultrahigh electron mobility in suspended graphene
- A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View
- Access devices for 3D crosspoint memorya)
- Engineering nonlinearity into memristors for passive crossbar applications
- Metal–Oxide RRAM
- Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices
- Memristive devices for computing.
- Oxide Double‐Layer Nanocrossbar for Ultrahigh‐Density Bipolar Resistive Memory
- Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.
- Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Cited by
- Understanding memristors and selectors for future storage and computing applications: Modeling and analysis
- Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications
- Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.
- THE BAND ENERGY ENGINEERING ON HIGH EPOXY (OR HYDROXYL) CONTENT GRAPHENE OXIDE
- A compact model for selectors based on metal doped electrolyte
- An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS
- Two-dimensional layered materials for memristive and neuromorphic applications
- Research progress on solutions to the sneak path issue in memristor crossbar arrays
- PATH: Evaluation of Boolean Logic using Path-based In-Memory Computing
- Nano Helical-Shaped Dual-Functional Resistive Memory for Low-Power Crossbar Array Application
- PATH: Evaluation of Boolean Logic Using Path-Based In-Memory Computing Systems
- Advancements in 2D layered material memristors: unleashing their potential beyond memory
- 2D materials-memristive devices nexus: From status quo to Impending applications
- On the Design and Fabrication of PATH-based In-Memory Computing Multipliers
- Investigation of mechanical properties of self-compacting concrete induced with zeolite and graphene oxide
- Graphene Oxide: Structure, Properties, Synthesis, and Reduction (A Review)
- Memristive Devices and Circuits
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