In situ observation of oxygen gettering by titanium overlayer on HfO2∕SiO2∕Si using high-resolution Rutherford backscattering spectroscopy
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- Type
- article
- Published
- 2007-09-19
- Cited by
- 18
- References
- 11
- OpenAlex
- https://openalex.org/W1985604916
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:120968624
Keywords
Overlayer, Annealing (glass), Materials science, Titanium, Rutherford backscattering spectrometry
References
- Electrical properties of ultrathin HfO2 films for replacement metal gate transistors, fabricated by atomic layer deposition using Hf(N(CH3)(C2H5))4 and O3
- Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide
- Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)
- High-κ gate dielectrics: Current status and materials properties considerations
- Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics
- Chemical states and electrical properties of a high-k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer
- Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks
- Constitution of Binary Alloys
- Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer
- Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
- High-resolution RBS: a powerful tool for atomic level characterization
Cited by
- Study on the performance of Tungsten–Titanium alloy film as a diffusion barrier for iron in a flexible CIGS solar cell
- Stability of HfO2/SiOx/Si surficial films at ultralow oxygen activity
- Nanoscale chemical state analysis of resistance random access memory device reacting with Ti
- Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing
- Hydrogen Evolution at Si-based Metal-Insulator-Semiconductor Photoelectrodes Enhanced by Inversion Channel Charge Collection and Hydrogen Spillover
- Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics
- Material and Device Characteristics of Metamorphic In_0.53 Ga_0.47 As MOSHEMTs Grown on GaAs and Si Substrates by MOCVD
- High-temperature Process Endurance of Oxide/Electrode Stacking Structure for Resistance Random Access Memory
- ZrTiO_x-Based Resistive Memory With MIS Structure Formed on Ge Layer
- Nitrogen incorporation during PVD deposition of TiO2:N thin films
- Novel high-k dielectrics for nanoelectronics
- A comprehensive investigation of MoO3 based resistive random access memory
- Uniform resistive switching and highly stable synaptic characteristics of HfOx sandwiched TaOx-based memristor for neuromorphic system
- Investigation of ultrathin yttrium silicide for NMOS source/drain contacts
- Enhanced resistance property between ALD-Ru and W by controlling oxygen behavior with post Ru deposition annealing
- Resistive Random Access Memory ( ReRAM ) : A Metal Oxide Memory Cell
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