Electronic properties of the MoS 2 -WS 2 heterojunction
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- Type
- article
- Published
- 2012-12-01
- Cited by
- 375
- References
- 49
- Access
- Open access
- OpenAlex
- https://openalex.org/W1489985147
- Semantic Scholar
- https://api.semanticscholar.org/CorpusID:53401082
Keywords
Heterojunction, Band gap, Materials science, Valence (chemistry), Homogeneous
References
- Fundamentals of Semiconductors
- Condensation of Semiconductor Microcavity Exciton Polaritons
- Extraordinary room-temperature photoluminescence in triangular WS2 monolayers.
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- Projector augmented-wave method.
- Generalized Gradient Approximation Made Simple.
- Fully unconstrained noncollinear magnetism within the projector augmented-wave method
- Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
- Structure of single-molecular-layer MoS2.
- Two-dimensional crystals-based heterostructures: materials with tailored properties
- New Route for Stabilization of 1T-WS2 and MoS2 Phases
- Atomic-scale structure of single-layer MoS2 nanoclusters
- Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
- Two-Dimensional Magnetotransport in the Extreme Quantum Limit
- Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
- Quantized hall effect
- Atomically thin MoS₂: a new direct-gap semiconductor.
- Electric‐Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling
- Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
- Stimulated scattering of indirect excitons in coupled quantum wells: signature of a degenerate Bose-gas of excitons.
Cited by
- Microscopic basis for the band engineering of Mo1−xWxS2-based heterojunction
- Ordered and Disordered Phases in Mo1−xWxS2 Monolayer
- Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study
- Strain tuning of electronic properties of various dimension elemental tellurium with broken screw symmetry
- Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion.
- Two-Dimensional Van der Waals Materials for Thin Film Transistor Applications
- Charge Transfer Excitons at van der Waals Interfaces.
- Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures.
- Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
- Transition‐metal dichalcogenides for spintronic applications
- Two-Dimensional Materials: Doping-Induced Variation, Heterojunction FETs and Hybrid Multilayers
- Two-dimensional transition-metal dichalcogenide materials: Toward an age of atomic-scale photonics
- Electronic structures of in-plane two-dimensional transition-metal dichalcogenide heterostructures.
- Hole spin relaxation in bilayer WSe2
- Scalable large nanosheets of transition metal disulphides through exfoliation of amine intercalated MS2 [M = Mo, W] in organic solvents
- Strain engineering of WS2, WSe2, and WTe2
- A vertical-oriented WS2 nanosheet sensitized by graphene: an advanced electrocatalyst for hydrogen evolution reaction.
- Two-Dimensional Layered Heterostructures Synthesized from Core-Shell Nanowires.
- Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light–Matter Interactions
- Tunable electronic and magnetic properties of WS2 nanoribbons